Ohkura M | Hitachi Ltd.

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概要

• OHKURA Makotoの詳細を見る
• 同名の論文著者
• Hitachi Ltd.の論文著者

関連著者

• OHKURA Makoto

  Central Research Lab., Hitachi, Lid.

• Ohkura M

  Hitachi Ltd.

• ITOGA Toshihiko

  Central Research Laboratories, Hitachi Ltd.

• Itoga Toshihiko

  Central Research Laboratories Hitachi Ltd.

• Takeda K

  Hitachi Ltd. Hitachi Research Laboratory

• TAKEDA Kazuo

  Central Research Lab., Hitachi, Lid.

• ISOMAE Seiichi

  Central Research Lab., Hitachi, Lid.

• Takeda Kazuyuki

  Department Of Energy Conversion Kyushu University

• Kojima H

  Nagoya Univ. Nagoya Jpn

• Isomae S

  Hitachi Ltd. Tokyo Jpn

• KOJIMA Hisao

  Central Research Laboratory, Hitachi Ltd.

• Itoga T

  Central Research Laboratory Hitachi Ltd.

• Takeda Kazuo

  Central Research Lab. Hitachi Ltd.

• Hiraiwa Atsushi

  Central Research Laboratory Hitachi Ltd.

• KUME Hitoshi

  Central Research Laboratory, Hitachi Ltd.

• Kawae Tatsuya

  Department Of Applied Quantum Physics Kyushu University

• Matsui Shigeru

  Instrument Div. Hitachi Ltd.

• MAESHIMA Muneo

  Instrument Div., Hitachi Ltd.

• Yugami Jiro

  Central Research Laboratory Hitachi Ltd.

• Yugami Jiro

  Central Research Laboratory

• Kume Hitoshi

  Central Research Laboratory Hitachi Ltd.

• Kume Hitoshi

  Central Research Laboratory

• Maeshima Muneo

  Instrument Div. Hitachi Ltd.

• HARAGUCHI Keiichi

  Central Research Laboratory, Hitachi, Ltd.

• Haraguchi Keiichi

  Central Research Laboratory Hitachi Ltd.

• USHIYAMA Masahiro

  Central Research Laboratory Hitachi Ltd.

• HOUZAWA Kazuyuki

  Central Research Laboratory, Hitachi, Ltd.

• Houzawa Kazuyuki

  Central Research Laboratory Hitachi Ltd.

• Itoga Toshihiko

  Central Research Laboratory Hitachi Ltd.

• Yugami Jiro

  Central Research Laboratory, Hitachi Ltd.

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著作論文

• Simultaneous Measurement of Size and Depth of Each Defect in a Silicon Wafer Using Light Scattering at Two Wavelengths : Principle, Limitation and Applications of Optical Shallow Defect Analyzer
• A New Simple Method for Extracting the Capacitance Coupling Coefficients of Sub-0.5-μm Flash Memory Cells (Special Issue on Microelectronic Test Structures)
• Highly Efficient Gettering of Heavy Metals Using Carbon Implanted Eptaxial Si Wafers
• Degradation of n^+/p Junction Characteristics by Aluminum Contamination
• The Increase of the Native Oxide Thickness on H-Terminated Si Surfaces by Gaseous Contamination in a Clean Room Atmosphere

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