Kume Hitoshi | Central Research Laboratory
スポンサーリンク
概要
関連著者
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Kume Hitoshi
Central Research Laboratory
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KUME Hitoshi
Central Research Laboratory, Hitachi Ltd.
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Kume Hitoshi
Central Research Laboratory Hitachi Ltd.
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KOBAYASHI Takashi
Central Research Laboratory, Hitachi Ltd.
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KATO Masataka
Semiconductor & Integrated Circuits, Hitachi Ltd.
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Kobayashi Takashi
Central Research Laboratory Hitachi Ltd.
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Torii Kazuyoshi
Central Research Laboratory Hitachi Lid.
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Mine Toshiyuki
Central Research Laboratory Hitachi Ltd
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Shiraishi Kenji
Graduate School Of Applied Physics Univ Of Tsukuba
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Miki Hiroshi
Central Research Laboratory Hitachi Limited
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Ishida Takeshi
Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan
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Mori Yuki
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan
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Tega Naoki
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan
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Yamada Ren-ichi
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan
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Sakamoto Yoshinori
Renesas Technology Corp.
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Ito Teruhiko
Renesas Technology Corp.
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Takeda Eiji
Central Research Laboratory Hitachi Ltd.
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Takeda Eiji
Central Research Laboratory Hitachi Lid.
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Adachi Tetsuo
Semiconductor Development Center Hitachi Ltd.
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Kurata Hideaki
Central Research Laboratory Hitachi Ltd.
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MATSUZAKI Nozomu
Central Research Laboratory, Hitachi, Ltd.
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Kamohara Shiro
Semiconductor & Integrated Circuits Hitachi Ltd.
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OKUYAMA Yutaka
Central Research Laboratory, Hitachi Ltd.
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MANABE Yukiko
Semiconductor & Integrated Circuits, Hitachi Ltd.
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OKUYAMA Kousuke
Semiconductor & Integrated Circuits, Hitachi Ltd.
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KUBOTA Katsuhiko
Semiconductor & Integrated Circuits, Hitachi Ltd.
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Kato Masataka
Semiconductor Development Center Hitachi Ltd.
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Ogura Keisuke
Semiconductor Amp Integrated Circuits Division Hitachi Ltd.
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OTSUGA Kazuo
Central Research Laboratory, Hitachi, Ltd.
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OHKURA Makoto
Central Research Lab., Hitachi, Lid.
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NODA Satoshi
Renesas Technology Corp.
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SASAGO Yoshitaka
Central Research Laboratory, Hitachi, Ltd.
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ARIGANE Tsuyoshi
Central Research Laboratory, Hitachi, Ltd.
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KAWAMURA Tetsufumi
Central Research Laboratory, Hitachi, Ltd.
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HOMMA Kazuki
Renesas Technology Corp.
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SHIMIZU Masahiro
Renesas Technology Corp.
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IKEDA Yoshinori
Renesas Technology Corp.
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TSUCHIYA Osamu
Renesas Technology Corp.
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FURUSAWA Kazunori
Hitachi ULSI Systems Co., Ltd.
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Otsuga Kazuo
Central Research Laboratory Hitachi Ltd.
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Matsuzaki Nozomu
Central Research Laboratory Hitachi Ltd.
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Kawamura Tetsufumi
Central Research Laboratory Hitachi Ltd.
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Nakagome Yoshinobu
Central Research Laboratory Hitachi Ltd.
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Nakagome Yoshinobu
Central Research Laboratory
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Kimura Katsutaka
Central Research Laboratory, Hitachi, Ltd.
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Tanaka Toshihiro
Semiconductor Development Center, Hitachi, Ltd.
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Otsuga Kazuo
Hitachi Ltd. Kokubunji‐shi Jpn
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Noda Satoshi
Renesas Technology Corporation
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Kume H
Hitachi Ltd. Kokubunji‐shi Jpn
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Ohkura M
Hitachi Ltd.
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Manabe Yukiko
Semiconductor & Integrated Circuits Hitachi Ltd.
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Okuyama Yutaka
Central Research Laboratory Hitachi Ltd.
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Kurata Hideaki
Hitachi Ltd. Kokubunji‐shi Jpn
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HARAGUCHI Keiichi
Central Research Laboratory, Hitachi, Ltd.
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Haraguchi Keiichi
Central Research Laboratory Hitachi Ltd.
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USHIYAMA Masahiro
Central Research Laboratory Hitachi Ltd.
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Sasago Yoshitaka
Central Research Laboratory Hitachi Ltd.
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Ishimaru Tetsuya
Central Research Laboratory Hitachi Ltd.
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Kimura Katsutaka
Central Research Lab. Hitachi Ltd.
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Okuyama Kousuke
Semiconductor & Integrated Circuits Hitachi Ltd.
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ASAI Shojiro
Central Research Laboratory
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Kubota Katsuhiko
Semiconductor & Integrated Circuits Hitachi Ltd.
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Arigane Tsuyoshi
Central Research Laboratory Hitachi Ltd.
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Furusawa Kazunori
Hitachi Ulsi Systems Co. Ltd.
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Kato Masataka
Semiconductor & Integrated Circuits Hitachi Ltd.
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HASHIMOTO Takashi
Renesas Technology Corp.
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Takeda Eiji
Central Research Laboratory
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Tanaka Toshihiro
Semiconductor Development Center Hitachi Ltd.
著作論文
- Anomalous Leakage Current Model for Retention Failure in Flash Memories
- A 126mm^2 4-Gb Multilevel AG-AND Flash Memory with Inversion-Layer-Bit-Line Technology(Integrated Electronics)
- Programming and Program-Verification Methods for Low-Voltage Flash Memories Using a Sector Programming Scheme
- A New Simple Method for Extracting the Capacitance Coupling Coefficients of Sub-0.5-μm Flash Memory Cells (Special Issue on Microelectronic Test Structures)
- New Observation of Hot-Carrier Injection Phenomena : A-3: LSI-2
- Nitride-based nonvolatile memory and role of SiON dielectric film for performance improvement
- State Transition of a Defect Causing Random-Telegraph-Noise Fluctuation in Stress-Induced Leakage Current of Thin SiO
- State Transition of a Defect Causing Random-Telegraph-Noise Fluctuation in Stress-Induced Leakage Current of Thin SiO₂ Films in a Metal-Oxide-Silicon Structure