Nitride-based nonvolatile memory and role of SiON dielectric film for performance improvement

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概要

• 論文の詳細を見る
• 2005-09-13

著者

• MATSUZAKI Nozomu

  Central Research Laboratory, Hitachi, Ltd.

• Matsuzaki Nozomu

  Central Research Laboratory Hitachi Ltd.

• Kume Hitoshi

  Central Research Laboratory

• Ishimaru Tetsuya

  Central Research Laboratory Hitachi Ltd.

• HASHIMOTO Takashi

  Renesas Technology Corp.

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• A New Simple Method for Extracting the Capacitance Coupling Coefficients of Sub-0.5-μm Flash Memory Cells (Special Issue on Microelectronic Test Structures)
• New Observation of Hot-Carrier Injection Phenomena : A-3: LSI-2
• Nitride-based nonvolatile memory and role of SiON dielectric film for performance improvement
• Enhanced Degradation During Static Stressing of a Metal Oxide Semiconductor Field Effect Transistor Embedded in a Circuit
• State Transition of a Defect Causing Random-Telegraph-Noise Fluctuation in Stress-Induced Leakage Current of Thin SiO
• State Transition of a Defect Causing Random-Telegraph-Noise Fluctuation in Stress-Induced Leakage Current of Thin SiO₂ Films in a Metal-Oxide-Silicon Structure

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