Programming and Program-Verification Methods for Low-Voltage Flash Memories Using a Sector Programming Scheme
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概要
- 論文の詳細を見る
Programming and program-verification methods for low-voltage flash memories using the Fowler-Nordheim tunneling mechanism for both programming and erasure are described. In these memories, a great many memory cells on a selected word line, such as 512-bytes worth of cells, are programmed at the same time for high-speed programming. The bit-by-bit programming/verification method can precisely control threshold-voltage deviation of programmed memory cells on the selected word line for low voltage operation. By using an internal program-end detection circuit, the completion of program mode can be checked for in one clock cycle, without reading out 512-bytes of data from the memory chip to the external controller. Moreover, the variable pulse-width programming method reduces the total number of verifications.
- 社団法人電子情報通信学会の論文
- 1995-07-25
著者
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Adachi Tetsuo
Semiconductor Development Center Hitachi Ltd.
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KUME Hitoshi
Central Research Laboratory, Hitachi Ltd.
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KATO Masataka
Semiconductor & Integrated Circuits, Hitachi Ltd.
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Kato Masataka
Semiconductor Development Center Hitachi Ltd.
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Ogura Keisuke
Semiconductor Amp Integrated Circuits Division Hitachi Ltd.
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Kimura Katsutaka
Central Research Laboratory, Hitachi, Ltd.
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Tanaka Toshihiro
Semiconductor Development Center, Hitachi, Ltd.
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Kume H
Hitachi Ltd. Kokubunji‐shi Jpn
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Kume Hitoshi
Central Research Laboratory
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Kimura Katsutaka
Central Research Lab. Hitachi Ltd.
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Tanaka Toshihiro
Semiconductor Development Center Hitachi Ltd.
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