A New Simple Method for Extracting the Capacitance Coupling Coefficients of Sub-0.5-μm Flash Memory Cells (Special Issue on Microelectronic Test Structures)
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概要
- 論文の詳細を見る
A new simple method for extracting the capacitance coupling coefficients of sub-0.5-μm flash memory cells is proposed. Different from the previously proposed methods, this method is not affected by a dopant profile of source region because a band-to-band tunneling current from the interface between the drain and the substrate is probed. Use of a reference device eliminates the necessity to make assumptions concerning the electron transport mechanism. Comparison with the other methods shows that the proposed method is simple and accurate.
- 社団法人電子情報通信学会の論文
- 1999-04-25
著者
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KUME Hitoshi
Central Research Laboratory, Hitachi Ltd.
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OHKURA Makoto
Central Research Lab., Hitachi, Lid.
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Kume Hitoshi
Central Research Laboratory Hitachi Ltd.
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Kume Hitoshi
Central Research Laboratory
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Ohkura M
Hitachi Ltd.
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HARAGUCHI Keiichi
Central Research Laboratory, Hitachi, Ltd.
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Haraguchi Keiichi
Central Research Laboratory Hitachi Ltd.
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USHIYAMA Masahiro
Central Research Laboratory Hitachi Ltd.
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