Enhanced Degradation During Static Stressing of a Metal Oxide Semiconductor Field Effect Transistor Embedded in a Circuit

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概要

• 論文の詳細を見る
• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 1997-07-01

著者

• YANG Cary

  Microelectronics Laboratory, Santa Clara University

• Nishida Takashi

  Central Research Laboratory Hitachi Ltd.

• GUPTA Ashawant

  Microelectronics Laboratory, Santa Clara University

• SUGIHARTO Dewi

  Microelectronics Laboratory, Santa Clara University

• MATSUZAKI Nozomu

  Central Research Laboratory, Hitachi, Ltd.

• MINAMI Masataka

  Central Research Laboratory, Hitachi, Ltd.

• YAMANAKA Toshiaki

  Central Research Laboratory, Hitachi, Ltd.

• NAGANO Takahiro

  Central Research Laboratory, Hitachi, Ltd.

関連論文

• Degradation and Recovery of Metal-Oxide-Semiconductor (MOS) Devices Stressed with Fowler-Nordheim (FN) Gate Current
• Direct Determination of Interface Trapped Charges
• Enhanced Degradation During Static Stressing of a Metal Oxide Semiconductor Field Effect Transistor Embedded in a Circuit
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