Nishida Takashi | Central Research Laboratory Hitachi Ltd.

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著作論文

Enhanced Degradation During Static Stressing of a Metal Oxide Semiconductor Field Effect Transistor Embedded in a Circuit
A 6.93-μm^2 Full CMOS SRAM Cell Technology for 1.8-V High-Performance Cache Memory
Large 1/f Noise in Polysilicon TFT Loads and its Effects on the Stability of SRAM Cells
Large 1/f Noise in Polysilicon TFT Loads and Its Effects on the Stability of SRAM Cells
A 6-ns 4-Mb CMOS SRAM with Offset-Voltage-Insensitive Current Sense Amplifiers(Special Issue on the 1994 VLSI Circuits Symposium)
Microstructures of 50-nm Cu Interconnects along the Longitudinal Direction
Influence of Grain Size Distributions on the Resistivity of 80nm Wide Cu Interconnects
Filling a Narrow and High Aspect-Ratio Trench with Electro-Cu Plating
Influence of P Content in Electroless Plated Ni-P Alloy Film on Interfacial Structures and Strength between Sn-Zn Solder and Plated Au/Ni-P Alloy Film
Influence of Phosphorus Concentration in Electroless Plated Ni-P Alloy Film on Interfacial Structures and Strength between Sn-Ag-(-Cu) Solder and Plated Ni-P Alloy Film
High Expression of the Second Lysine Decarboxylase Gene, ldc, in Escherichia coli WC196 Due to the Recognition of the Stop Codon (TAG), at a Position Which Corresponds to the 33th Amino Acid Residue of σ^, as a Serine Residue by the Amber Suppressor,
RpoS-Dependent Expression of the Second Lysine Decarboxylase Gene in Escherichia coli
^V and ^Mn Hyperfine Fields in the L2_1-Type Fe_2Mn_V_xSi and Fe_2T_Cr_xSi (T=V, Mn) Compounds

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