Influence of Grain Size Distributions on the Resistivity of 80nm Wide Cu Interconnects
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概要
- 論文の詳細を見る
- Japan Institute of Metalsの論文
- 2007-03-01
著者
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ONUKI Jin
Department of Materials Science and Engineering, Ibaraki University
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Onuki Jin
Akita Prefectural University
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AKAHOSHI Haruo
Hitachi Research Laboratory, Hitachi Ltd.
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Onuki J
Dep. Of Materials Sci. And Engineering Ibaraki Univ.
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Onuki J
Akita Prefectural Univ. Honjo Jpn
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Onuki Jin
Department Of Electronic And Information Systems Faculty Of Systems Science And Technology Akita Pre
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Nishida Takashi
Central Research Laboratory Hitachi Ltd.
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Tobita Toshimi
Hitachi Kyowa Engineering Ltd.
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CHONAN Yasunori
Department of Electronics and Information Systems, Faculty of Systems Science and Technology, Akita
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Khoo Khyoupin
Graduate School Of Science And Engineering Ibaraki University
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Chiba Masahiro
Hitachi Kyowa Engineering Ltd.
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Akahoshi Haruo
Hitachi Research Laboratory Hitachi Ltd.
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Nagano Tomohiro
Department Of Physics Faculty Of Sciense And Technology Science University Of Tokyo
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KHOO Khyoupin
Department of Materials Science and Engineering, Ibaraki University
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NAGANO Takahiro
Department of materials science and Engineering, Ibaraki University
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ISHIKAWA Kensuke
Micro Device Division, Hitachi Ltd.
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SAITO Tatsuyuki
Micro Device Division, Hitachi Ltd.
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Saito Tatuyuki
Micro Device Division Hitachi Ltd.
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Khoo Khyoupin
Department Of Materials Science And Engineering Ibaraki University
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Chonan Yasunori
Department Of Electronics And Information System Faculty Of System Science And Technology Akita Pref
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Ishikawa Kensuke
Micro Device Division Hitachi Ltd.
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Nagano Takahiro
Semiconductor And Integrated Circuits Division Hitachi Ltd.
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Chiba Masahiro
Hitachi Kyowa Engineering Co., Ltd., Hitachi, Ibaraki 319-1292, Japan
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- PREFACE
- Reliability Enhancement of Thick Al-Cu Wire Bonds in IGBT Modules Using Al_2Cu Precipitates
- Void Generation Mechanism in Cu Filling Process by Electroplating for Ultra Fine Wire Trenches
- Aspect Ratio Dependence of the Resistivity of Fine Line Cu Interconnects
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- Large 1/f Noise in Polysilicon TFT Loads and its Effects on the Stability of SRAM Cells
- Coating Adhesion Evaluation by Nanoscratching Simulation Using the Molecular Dynamics Method
- Observation of Microstructures in the Longitudinal Direction of Very Narrow Cu Interconnects
- Influence of Minimum Barrier Metal Thickness at Trenches on Void Formation in 50-nm-wide Cu Wiring
- ナノスケールダマシン銅配線のアニーリングによる構造変化