High-Temperature Thick Al Wire Bonding Technology for High-Power Modules

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2002-08-15

著者

• Onuki Jin

  Akita Prefectural University

• Koizumi M

  Department Of Electronics And Information Systems Faculty Of Systems Science And Technology Akita Pr

• Onuki J

  Dep. Of Materials Sci. And Engineering Ibaraki Univ.

• Onuki J

  Akita Prefectural Univ. Honjo Jpn

• Onuki Jin

  Faculty Of Systems And Technology Akita Prefectural University

• KOMIYAMA Takao

  Faculty of System Science and Technology, Akita Prefectural University

• CHONAN Yasunori

  Faculty of System Science and Technology, Akita Prefectural University

• KOIZUMI Masahiko

  Hitachi Research Lob., Hitachi, Ltd.

• SHIGEMURA Tatsuya

  Digital Media Products Division, Hitachi. Led.

• Komiyama Takao

  Department Of Electronic And Information Systems Faculty Of Systems Science And Technology Akita Pre

• Chonan Yasunori

  Department Of Electronics And Information System Faculty Of System Science And Technology Akita Pref

• Shigemura Tatsuya

  Digital Media Products Division Hitachi. Led.

関連論文

• Impact of High Heating Rate, Low Temperature, and Short Time Annealing on the Realization of Low Resistivity Cu Wire
• High-Temperature Thick Al Wire Bonding Technology for High-Power Modules
• High-Strength and High-Speed Bonding Technology using Thick Al-Ni Wire
• Development of A New High-Frequency, High-Peak Current Power Source for High Constricted Arc Formation
• Molecular Dynamics Simulation of Grain Growth of Cu Film : Effects of Adhesion Strength between Substrate and Cu Atoms
• Molecular Dynamics Simulation of Void Generation during Annealing of Copper Wiring
• Joining of Oxide Dispersion Strengthened Ni Based Super Alloys
• Influence on the Electro-Migration Resistance by Line Width and Average Grain Size along the Longitudinal Direction of Very Narrow Cu Wires
• Microstructures of 50-nm Cu Interconnects along the Longitudinal Direction
• Influence of Grain Size Distributions on the Resistivity of 80nm Wide Cu Interconnects
• Aspect ratio dependence of the resistivity of fine line Cu interconnects
• Filling a Narrow and High Aspect-Ratio Trench with Electro-Cu Plating
• Filling 80-nm-Wide and High-Aspect-Ratio Trench with Pulse Wave Copper Electroplating and Observation of the Microstructure
• Improvement of the Surface Layer of Steel Using Microwave Plasma Nitriding
• Microwave Plasma Nitriding of Hollow Tube Inner Wall
• The Low Temperature Bonding between Si and Electrode Using Sputtered Ag Films
• Influence of P Content in Electroless Plated Ni-P Alloy Film on Interfacial Structures and Strength between Sn-Zn Solder and Plated Au/Ni-P Alloy Film
• Influence of Phosphorus Concentration in Electroless Plated Ni-P Alloy Film on Interfacial Structures and Strength between Sn-Ag-(-Cu) Solder and Plated Ni-P Alloy Film
• Influence of Soldering Conditions on Void Formation in Large-area Solder Joints
• The Influence of Phosphorus Concentration of Electroless Plated Ni-P Film on Interfacial Structures in the Joints between Sn-Ag Solder and Ni-P Alloy Film
• A Void Free Soldering Process in Large-Area, High Power Insulated Gate Bipolar Transistor Modules
• Reliability Enhancement of Solder Joints Made by a Void Free Soldering process
• Interface Reaction between Solder and Plated Nickel Film
• Investigation of Low Loss and High Reliability Encapsulation Technology in Large-Area, High-Power Semiconductor Devices
• Impact of Cu Local Interconnect on LSI Performance
• 多結晶銅薄膜の粒成長に及ぼす不純物の影響
• Effect of Additive-Free Plating and High Heating Rate Annealing on the Formation of Low Resistivity Fine Cu Wires
• Void Generation Mechanism in Cu Filling Process by Electroplating for Ultra Fine Wire Trenches
• Aspect Ratio Dependence of the Resistivity of Fine Line Cu Interconnects
• Filling 80-nm-Wide and High-Aspect-Ratio Trench with Pulse Wave Copper Electroplating and Observation of the Microstructure
• Observation of Microstructures in the Longitudinal Direction of Very Narrow Cu Interconnects
• Influence of Minimum Barrier Metal Thickness at Trenches on Void Formation in 50-nm-wide Cu Wiring

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