Aspect Ratio Dependence of the Resistivity of Fine Line Cu Interconnects

スポンサーリンク

概要

• 論文の詳細を見る

• The effect of aspect-ratios of very narrow Cu interconnects of less than 100 nm on the resistivity has been discussed. From longitudinal cross-sectional transmission electron microscope (TEM) observation, many very small grains were observed at the bottom of the trench, while larger grain sizes are predominant in the upper part of the Cu interconnects. The resistivity was found to decrease significantly when increasing the aspect-ratio in fine line Cu wires due to the larger grain size distributions in the upper part of the Cu interconnects with higher aspect-ratios. This result demonstrates that the aspect-ratio of Cu wires are effective for controlling the resistivity in future Cu interconnects with very narrow and shallow dimensions.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-07-15

著者

• Onuki Jin

  Department Of Electronic And Information Systems Faculty Of Systems Science And Technology Akita Pre

• Tobita Toshimi

  Hitachi Kyowa Engineering Ltd.

• Akahoshi Haruo

  Hitachi Research Laboratory Hitachi Ltd.

• NAGANO Takahiro

  Department of materials science and Engineering, Ibaraki University

• Khoo Khyoupin

  Department Of Materials Science And Engineering Ibaraki University

• Haba Toshio

  Hitachi Research Laboratory Hitachi Ltd.

• Chonan Yasunori

  Department Of Electronics And Information System Faculty Of System Science And Technology Akita Pref

• Ishikawa Kensuke

  Micro Device Division Hitachi Ltd.

• Chiba Masahiro

  Hitachi Kyowa Engineering Co., Ltd., Hitachi, Ibaraki 319-1292, Japan

• Haba Toshio

  Hitachi Research Laboratory, Hitachi, Ltd., Hitachi, Ibaraki 319-1292, Japan

• Ishikawa Kensuke

  Micro Device Division, Hitachi, Ltd., Ome, Tokyo 198-8512, Japan

• Nagano Takahiro

  Department of Materials Science and Engineering, Ibaraki University, Hitachi, Ibaraki 316-8511, Japan

関連論文

• Impact of High Heating Rate, Low Temperature, and Short Time Annealing on the Realization of Low Resistivity Cu Wire
• Mechanical and Dielectric Properties of a New Polymer Blend Composed of 1, 2-Bis (vinylphenyl) ethane and Thermosetting Poly (phenylene ether) Copolymer Obtained from 2, 6-Dimethylphenol and 2-Allyl-6-methylphenol
• Low Dielectric Loss Copolymer Obtained from 2,6-Dimethylphenol and 2-Allyl-6-methylphenol via Cu-catalyzed Oxidative Coupling Polymerization
• High-Temperature Thick Al Wire Bonding Technology for High-Power Modules
• High-Strength and High-Speed Bonding Technology using Thick Al-Ni Wire
• Molecular Dynamics Simulation of Grain Growth of Cu Film : Effects of Adhesion Strength between Substrate and Cu Atoms
• Molecular Dynamics Simulation of Void Generation during Annealing of Copper Wiring
• Influence on the Electro-Migration Resistance by Line Width and Average Grain Size along the Longitudinal Direction of Very Narrow Cu Wires
• Microstructures of 50-nm Cu Interconnects along the Longitudinal Direction
• Influence of Grain Size Distributions on the Resistivity of 80nm Wide Cu Interconnects
• Filling a Narrow and High Aspect-Ratio Trench with Electro-Cu Plating
• Improvement of the Surface Layer of Steel Using Microwave Plasma Nitriding
• Microwave Plasma Nitriding of Hollow Tube Inner Wall
• The Low Temperature Bonding between Si and Electrode Using Sputtered Ag Films
• Influence of P Content in Electroless Plated Ni-P Alloy Film on Interfacial Structures and Strength between Sn-Zn Solder and Plated Au/Ni-P Alloy Film
• Influence of Phosphorus Concentration in Electroless Plated Ni-P Alloy Film on Interfacial Structures and Strength between Sn-Ag-(-Cu) Solder and Plated Ni-P Alloy Film
• Influence of Soldering Conditions on Void Formation in Large-area Solder Joints
• The Influence of Phosphorus Concentration of Electroless Plated Ni-P Film on Interfacial Structures in the Joints between Sn-Ag Solder and Ni-P Alloy Film
• Reliability Enhancement of Solder Joints Made by a Void Free Soldering process
• Interface Reaction between Solder and Plated Nickel Film
• Effect of Physical Properties of Al–Si Electrode Films on the Deformation Behaviors and the Strength of Thick Al Wire Bonds during Thermal Cycle Test
• Electrochemical and Simulative Studies of Trench Filling Mechanisms in the Copper Damascene Electroplating Process
• Determination of the Phase-Field Parameters for Computer Simulation of Heat Treatment Process of Ultra Thin Al Film
• RpoS-Dependent Expression of the Second Lysine Decarboxylase Gene in Escherichia coli
• Computer Simulation of Silicon Nanoscratch Test
• Friction and Elongation of Al Electrodes due to Micro-Sliding between the Inner Mo Electrode and the Al Electrodes in High-Power Devices
• 多結晶銅薄膜の粒成長に及ぼす不純物の影響
• Effect of Additive-Free Plating and High Heating Rate Annealing on the Formation of Low Resistivity Fine Cu Wires
• PREFACE
• Reliability Enhancement of Thick Al-Cu Wire Bonds in IGBT Modules Using Al_2Cu Precipitates
• Void Generation Mechanism in Cu Filling Process by Electroplating for Ultra Fine Wire Trenches
• Aspect Ratio Dependence of the Resistivity of Fine Line Cu Interconnects
• Filling 80-nm-Wide and High-Aspect-Ratio Trench with Pulse Wave Copper Electroplating and Observation of the Microstructure
• Coating Adhesion Evaluation by Nanoscratching Simulation Using the Molecular Dynamics Method
• Observation of Microstructures in the Longitudinal Direction of Very Narrow Cu Interconnects
• Influence of Minimum Barrier Metal Thickness at Trenches on Void Formation in 50-nm-wide Cu Wiring
• ナノスケールダマシン銅配線のアニーリングによる構造変化

もっと見る 閉じる

スポンサーリンク