Investigation of Low Loss and High Reliability Encapsulation Technology in Large-Area, High-Power Semiconductor Devices

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概要

• 論文の詳細を見る

• In order to realize uniform and low contact resistance in the low mounting force region for large-area, high-power semiconductor devices, the effects of hardness and surface cleanliness of metal sheets inserted between an Al cathode and Mo internal electrode on the contact resistance were investigated as a function of mounting force. Contact resistance was lowered with increasing cleanliness and decreasing hardness of the inserted sheet for all values of the mounting force. A new process was developed in which an Ag-plated Mo sheet is heat-treated at 573 K for 15 min in air. It was confirmed that devices with the new Ag-plated Mo sheet have efficient long form reliability. The contact resistance and its dependence on the mounting force of the devices using this sheet are of the same level as those of an Ag-sputtered Mo sheet and an Ag sheet.

• 社団法人応用物理学会の論文
• 1999-11-15

著者

• Onuki Jin

  Akita Prefectural University

• Onuki J

  Dep. Of Materials Sci. And Engineering Ibaraki Univ.

• Onuki J

  Akita Prefectural Univ. Honjo Jpn

• Onuki Jin

  Hitachi Research Laboratory Hitachi Ltd.

• Onose Hidekatsu

  Hitachi Research Laboratory Hitachi Ltd.

• Morita Toshiaki

  Hitachi Research Laboratory Hitachi Ltd.

• Kato Mitsuo

  Hitachi Research Laboratory Hitachi Ltd.

• MATSUURA Nobuyoshi

  Semiconductor and Integrated Circuits Division, Hitachi Ltd.

• SAKURADA Shuroku

  Hitachi Works, Hitachi Ltd.

• Sakurada Shuroku

  Hitachi Works Hitachi Ltd.

• Matsuura Nobuyoshi

  Semiconductor And Integrated Circuits Division Hitachi Ltd.

関連論文

• Impact of High Heating Rate, Low Temperature, and Short Time Annealing on the Realization of Low Resistivity Cu Wire
• High-Temperature Thick Al Wire Bonding Technology for High-Power Modules
• High-Strength and High-Speed Bonding Technology using Thick Al-Ni Wire
• Development of A New High-Frequency, High-Peak Current Power Source for High Constricted Arc Formation
• Molecular Dynamics Simulation of Grain Growth of Cu Film : Effects of Adhesion Strength between Substrate and Cu Atoms
• Molecular Dynamics Simulation of Void Generation during Annealing of Copper Wiring
• Joining of Oxide Dispersion Strengthened Ni Based Super Alloys
• Influence on the Electro-Migration Resistance by Line Width and Average Grain Size along the Longitudinal Direction of Very Narrow Cu Wires
• Characteristics of Epitaxial Layers Grown by a New RF-Induction Heated Hot-Wall-Type Reactor for High-Volume Epitaxy
• Microstructural Analysis of the Bonding Interface between Thick Al Wire and Al-1 mass%Si Electrode Film
• Microstructures of 50-nm Cu Interconnects along the Longitudinal Direction
• Influence of Grain Size Distributions on the Resistivity of 80nm Wide Cu Interconnects
• Aspect ratio dependence of the resistivity of fine line Cu interconnects
• Filling a Narrow and High Aspect-Ratio Trench with Electro-Cu Plating
• Filling 80-nm-Wide and High-Aspect-Ratio Trench with Pulse Wave Copper Electroplating and Observation of the Microstructure
• Improvement of the Surface Layer of Steel Using Microwave Plasma Nitriding
• Microwave Plasma Nitriding of Hollow Tube Inner Wall
• The Low Temperature Bonding between Si and Electrode Using Sputtered Ag Films
• Influence of P Content in Electroless Plated Ni-P Alloy Film on Interfacial Structures and Strength between Sn-Zn Solder and Plated Au/Ni-P Alloy Film
• Influence of Phosphorus Concentration in Electroless Plated Ni-P Alloy Film on Interfacial Structures and Strength between Sn-Ag-(-Cu) Solder and Plated Ni-P Alloy Film
• Influence of Soldering Conditions on Void Formation in Large-area Solder Joints
• The Influence of Phosphorus Concentration of Electroless Plated Ni-P Film on Interfacial Structures in the Joints between Sn-Ag Solder and Ni-P Alloy Film
• A Void Free Soldering Process in Large-Area, High Power Insulated Gate Bipolar Transistor Modules
• Reliability Enhancement of Solder Joints Made by a Void Free Soldering process
• Interface Reaction between Solder and Plated Nickel Film
• Liquid Phase Diffusion Welding of Nickel-Base Superalloy Using Ni-B System Alloyed Layer Formed on Bonding Surface with Sputtering
• Study on Liquid Phase Diffusion Welding of Nickel Base Superalloy Used Ni-B System Alloyed Layer Formed on Bonding Surface with Sputtering
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• Friction and Elongation of Al Electrodes due to Micro-Sliding between the Inner Mo Electrode and the Al Electrodes in High-Power Devices
• Effects of Frequency and Surface Cleanliness of Al-Si Electrode on Ultrasonic Bonding Characteristics of Thick Al Wire Bonding
• Effect of Si Precipitation on Damage in Ultrasonic Bonding of Thick Al Wire
• 多結晶銅薄膜の粒成長に及ぼす不純物の影響
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• A Void Free Soldering Process in Large-Area, High Power Insulated Gate Bipolar Transistor Modules
• Low-Temperature Bonding of Silver to Aluminum
• Void Generation Mechanism in Cu Filling Process by Electroplating for Ultra Fine Wire Trenches

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