A Void Free Soldering Process in Large-Area, High Power Insulated Gate Bipolar Transistor Modules
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概要
- 論文の詳細を見る
We have developed a new void free process for making the solder joint between the chip mounted AlN substrate and the metal substrate in large-area, high power insulated gate bipolar transistor (IGBT) modules. This new process consists of two steps. First, Ar+ were used to clean the surfaces of Ni plated film on a metal and AlN substrates which were then coated with 0.5-$\mu$m-thick Ag film. Second, 50 wt% Pb–Sn solder was sandwiched between the two substrates and heated to 503 K in a vacuum for 5 min before being cooled in a N2 atmosphere. By using this process, the area percentage of voids in a soldering area up to $130\times 190$ mm2 can be reduced to less than 0.1%. IGBT modules made by this process were also found to exhibit satisfactory current-voltage characteristics.
- 2001-06-15
著者
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Onuki Jin
Hitachi Research Laboratory Hitachi Ltd.
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Nihei Masayasu
Hitachi Research Laboratory Hitachi Ltd.
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KOMIYAMA Takao
Akita Prefectural University
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CHONAN Yasunori
Akita Prefectural University
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Suwa Masateru
Hitachi Research Laboratory Hitachi Ltd.
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Morita Toshiaki
Hitachi Research Laboratory Hitachi Ltd.
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Komiyama Takao
Akita Prefectural University, Faculty of Systems Science and Technology, Honjo, Akita 015-0055, Japan
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Suwa Masateru
Hitachi Research Laboratory, Hitachi Ltd., Hitachi, Ibaraki 319-1292, Japan
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Saitou Ryuuichi
Hitachi Research Laboratory, Hitachi Ltd., Hitachi, Ibaraki 319-1292, Japan
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Nihei Masayasu
Hitachi Research Laboratory, Hitachi Ltd., Hitachi, Ibaraki 319-1292, Japan
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Chonan Yasunori
Akita Prefectural University, Faculty of Systems Science and Technology, Honjo, Akita 015-0055, Japan
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