Effect of Si Precipitation on Damage in Ultrasonic Bonding of Thick Al Wire

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概要

• 論文の詳細を見る

著者

• Onuki Jin

  Hitachi Research Laboratory Hitachi Ltd.

• KOIZUMI Masahiro

  Hitachi Research Laboratory, Hitachi Ltd.

• Koizumi M

  Hitachi Research Laboratory Hitachi Ltd.

• Koizumi Masahiro

  Hitachi Research Laboratory Hitachi Ltd.

関連論文

• Joining of Oxide Dispersion Strengthened Ni Based Super Alloys
• Microstructural Analysis of the Bonding Interface between Thick Al Wire and Al-1 mass%Si Electrode Film
• A Void Free Soldering Process in Large-Area, High Power Insulated Gate Bipolar Transistor Modules
• Reliability Enhancement of Solder Joints Made by a Void Free Soldering process
• Investigation of Low Loss and High Reliability Encapsulation Technology in Large-Area, High-Power Semiconductor Devices
• Effects of Frequency and Surface Cleanliness of Al-Si Electrode on Ultrasonic Bonding Characteristics of Thick Al Wire Bonding
• Effect of Si Precipitation on Damage in Ultrasonic Bonding of Thick Al Wire
• A Void Free Soldering Process in Large-Area, High Power Insulated Gate Bipolar Transistor Modules

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