Effects of Frequency and Surface Cleanliness of Al-Si Electrode on Ultrasonic Bonding Characteristics of Thick Al Wire Bonding

スポンサーリンク

概要

• 論文の詳細を見る

著者

• Onuki Jin

  Hitachi Research Laboratory Hitachi Ltd.

• ISHIKAWA Isao

  Technical Research Laboratory, Hitachi Construction Machinery Co., Ltd.

• Koizumi Masahiro

  Hitachi Research Laboratory Hitachi Ltd.

• Ishikawa Isao

  Technical Research Laboratory Hitachi Construction Machinery Co. Ltd.

• KOIZUMI Masahiro

  Hitachi Research Laboratory, Hitachi, Ltd.

関連論文

• Joining of Oxide Dispersion Strengthened Ni Based Super Alloys
• Microstructural Analysis of the Bonding Interface between Thick Al Wire and Al-1 mass%Si Electrode Film
• A Void Free Soldering Process in Large-Area, High Power Insulated Gate Bipolar Transistor Modules
• Reliability Enhancement of Solder Joints Made by a Void Free Soldering process
• Chemical Isotropic Etching of Single-Crystal Silicon for Acoustic Lens of Scanning Acoustic Microscope
• Investigation of Low Loss and High Reliability Encapsulation Technology in Large-Area, High-Power Semiconductor Devices
• Effects of Frequency and Surface Cleanliness of Al-Si Electrode on Ultrasonic Bonding Characteristics of Thick Al Wire Bonding
• Effect of Si Precipitation on Damage in Ultrasonic Bonding of Thick Al Wire
• A Void Free Soldering Process in Large-Area, High Power Insulated Gate Bipolar Transistor Modules

スポンサーリンク