Influence on the Electro-Migration Resistance by Line Width and Average Grain Size along the Longitudinal Direction of Very Narrow Cu Wires
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概要
- 論文の詳細を見る
- 2010-07-01
著者
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ONUKI Jin
Department of Materials Science and Engineering, Ibaraki University
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Onuki Jin
Akita Prefectural University
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Onuki J
Dep. Of Materials Sci. And Engineering Ibaraki Univ.
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Onuki J
Akita Prefectural Univ. Honjo Jpn
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Onuki Jin
Department Of Electronic And Information Systems Faculty Of Systems Science And Technology Akita Pre
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Khoo Khyoupin
Graduate School Of Science And Engineering Ibaraki University
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KHOO Khyoupin
Department of Materials Science and Engineering, Ibaraki University
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TASHIRO Suguru
Department of Materials Science and Engineering, Ibaraki University
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Khoo Khyoupin
Department Of Materials Science And Engineering Ibaraki University
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Tashiro Suguru
Department Of Materials Science And Engineering Ibaraki University
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Khoo Khyoupin
Dep. Of Materials Sci. Fac. Of Engineering Ibaraki Univ.
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- 多結晶銅薄膜の粒成長に及ぼす不純物の影響
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- PREFACE
- Reliability Enhancement of Thick Al-Cu Wire Bonds in IGBT Modules Using Al_2Cu Precipitates
- Void Generation Mechanism in Cu Filling Process by Electroplating for Ultra Fine Wire Trenches
- Aspect Ratio Dependence of the Resistivity of Fine Line Cu Interconnects
- Filling 80-nm-Wide and High-Aspect-Ratio Trench with Pulse Wave Copper Electroplating and Observation of the Microstructure
- Coating Adhesion Evaluation by Nanoscratching Simulation Using the Molecular Dynamics Method
- Observation of Microstructures in the Longitudinal Direction of Very Narrow Cu Interconnects
- Influence of Minimum Barrier Metal Thickness at Trenches on Void Formation in 50-nm-wide Cu Wiring
- ナノスケールダマシン銅配線のアニーリングによる構造変化