Molecular Dynamics Simulation of Void Generation during Annealing of Copper Wiring
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概要
- 論文の詳細を見る
- Japan Institute of Metalsの論文
- 2009-10-01
著者
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ONUKI Jin
Department of Materials Science and Engineering, Ibaraki University
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SASAJIMA Yasushi
Department of Materials Science and Engineering, Ibaraki University
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Onuki Jin
Department Of Materials Science And Engineering Ibaraki University
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篠嶋 妥
茨城大学工学部物質工学科
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篠嶋 妥
茨城大工
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Onuki J
Dep. Of Materials Sci. And Engineering Ibaraki Univ.
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Onuki Jin
Department Of Electronic And Information Systems Faculty Of Systems Science And Technology Akita Pre
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NAGAI Takeshiro
Department of Materials Science and Engineering, Ibaraki University
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篠嶋 妥
Department Of Materials Science And Engineering Faculty Of Engineering Ibaraki University
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篠嶋 妥
茨城大
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Sasajima Yasushi
Department Of Materials Science And Engineering Ibaraki University
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Nagai Takeshiro
Graduate School Of Science And Engineering Ibaraki University
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Nagai Takeshiro
Department Of Materials Science And Engineering Ibaraki University
関連論文
- アルミニウム合金の結晶粒微細化とセミソリッドフォーミング
- Impact of High Heating Rate, Low Temperature, and Short Time Annealing on the Realization of Low Resistivity Cu Wire
- 溶融純アルミニウムの水素溶解度
- Al-Si合金鋳塊中の水素拡散とミクロ組織の関係
- Al-Cu合金鋳物中の水素拡散係数
- Al-Cu合金中の水素溶解度
- 5p-E4-10 Henley型2次元準結晶モデルの格子力学
- 3p-A3-9 2次元準周期的構造の成長のシミュレーション
- 26a-E-9 2次元ペンローズ・パタンの安定性
- 30a-RC-1 2次元ペンローズ・パタンの格子力学
- Cu超微細配線構造の安定性に及ぼす結晶方位の影響
- アルミニウム薄膜における粒成長のフェーズフィールドシミュレーション
- High-Temperature Thick Al Wire Bonding Technology for High-Power Modules
- High-Strength and High-Speed Bonding Technology using Thick Al-Ni Wire
- Development of A New High-Frequency, High-Peak Current Power Source for High Constricted Arc Formation
- Molecular Dynamics Simulation of Grain Growth of Cu Film : Effects of Adhesion Strength between Substrate and Cu Atoms
- Molecular Dynamics Simulation of Void Generation during Annealing of Copper Wiring
- 金属多層膜Cu/Ni,Cu/Agの超微小硬度
- 金属多層膜の作製とその構造評価
- Joining of Oxide Dispersion Strengthened Ni Based Super Alloys
- Influence on the Electro-Migration Resistance by Line Width and Average Grain Size along the Longitudinal Direction of Very Narrow Cu Wires
- Monte Carlo Simulation of Growth Process of Two-Dimensional Quasicrystal
- Computer Simulation of Growth Process of Binary Quasi Crystal
- Computer Simulation of Film Growth Process on the Two-Dimensional Penrose Pattern
- Microstructures of 50-nm Cu Interconnects along the Longitudinal Direction
- Influence of Grain Size Distributions on the Resistivity of 80nm Wide Cu Interconnects
- Filling a Narrow and High Aspect-Ratio Trench with Electro-Cu Plating
- Improvement of the Surface Layer of Steel Using Microwave Plasma Nitriding
- Microwave Plasma Nitriding of Hollow Tube Inner Wall
- The Low Temperature Bonding between Si and Electrode Using Sputtered Ag Films
- Influence of P Content in Electroless Plated Ni-P Alloy Film on Interfacial Structures and Strength between Sn-Zn Solder and Plated Au/Ni-P Alloy Film
- Influence of Phosphorus Concentration in Electroless Plated Ni-P Alloy Film on Interfacial Structures and Strength between Sn-Ag-(-Cu) Solder and Plated Ni-P Alloy Film
- Influence of Soldering Conditions on Void Formation in Large-area Solder Joints
- The Influence of Phosphorus Concentration of Electroless Plated Ni-P Film on Interfacial Structures in the Joints between Sn-Ag Solder and Ni-P Alloy Film
- Reliability Enhancement of Solder Joints Made by a Void Free Soldering process
- Interface Reaction between Solder and Plated Nickel Film
- シリコンのナノインデンテーションの計算機実験
- サーファクタント・エピタキシャル成長に関する計算機実験
- 30a-D-3 ペンローズパタン上における粒子の薄膜成長過程についての計算機実験
- Effect of Physical Properties of Al–Si Electrode Films on the Deformation Behaviors and the Strength of Thick Al Wire Bonds during Thermal Cycle Test
- Effect of additive-free plating and high heating rate annealing on the formation of low resistivity fine Cu wires
- サクシノニトリル-アセトン系有機モデル合金のデンドライト成長
- フェーズフィールド法によるAl-Zn二元合金のデンドライト成長シミュレーション
- フェーズフィールド法によるAl-Zn合金の一方向凝固シミュレーション
- Al系二元合金の等温デンドライト成長 : フェーズフィールド法と摂動理論との比較
- フェーズフィールド法によるAl-Cu二元合金の等温デンドライト成長シミュレーション
- フェーズフィールド法による Al 系二元合金の等温凝固過程のシミュレーション
- 硫化物添加による過共晶Al-Si合金の改良処理効果
- 1方向凝固させたAl-Si合金鋳塊中の水素拡散
- モンテカルロ法による薄膜形成過程のシミュレ-ション
- Al-CuおよびAl-Zn合金のデンドライト成長機構とフェーズフィールド法シミュレーション
- Determination of the Phase-Field Parameters for Computer Simulation of Heat Treatment Process of Ultra Thin Al Film
- Phase Field Simulation on Directional Solidification of Succinonitrile(SCN)-Acetone Organic Model Alloy
- P添加過共晶Al-Si合金の改良処理効果と初晶Si晶出開始温度
- P添加過共晶Al-Si合金の初晶および共晶Si微細化効果
- 金属多層膜の超弾性効果--計算機シミュレ-ションによる検討
- フェーズフィールド法による凝固シミュレーション
- 多層薄膜の熱伝導 : 分子動力学法による研究
- Monte Carlo Simulation of Grain Boundary Cross Effect on Hydrogen Diffusivity in Aluminum
- Investigation of Low Loss and High Reliability Encapsulation Technology in Large-Area, High-Power Semiconductor Devices
- Monte Carlo Simulation of Diffusion Process on Quasi-Lattice
- Computer Simulation of Silicon Nanoscratch Test
- Friction and Elongation of Al Electrodes due to Micro-Sliding between the Inner Mo Electrode and the Al Electrodes in High-Power Devices
- 多結晶銅薄膜の粒成長に及ぼす不純物の影響
- Effect of Additive-Free Plating and High Heating Rate Annealing on the Formation of Low Resistivity Fine Cu Wires
- PREFACE
- Reliability Enhancement of Thick Al-Cu Wire Bonds in IGBT Modules Using Al_2Cu Precipitates
- Void Generation Mechanism in Cu Filling Process by Electroplating for Ultra Fine Wire Trenches
- Aspect Ratio Dependence of the Resistivity of Fine Line Cu Interconnects
- Filling 80-nm-Wide and High-Aspect-Ratio Trench with Pulse Wave Copper Electroplating and Observation of the Microstructure
- Coating Adhesion Evaluation by Nanoscratching Simulation Using the Molecular Dynamics Method
- Observation of Microstructures in the Longitudinal Direction of Very Narrow Cu Interconnects
- Influence of Minimum Barrier Metal Thickness at Trenches on Void Formation in 50-nm-wide Cu Wiring
- Molecular Dynamics Study of the Structural Changes of Ultra-fine Particles
- ナノスケールダマシン銅配線のアニーリングによる構造変化
- 29p-LG-9 2次元ペンローズ・パタンの格子力学(II)(格子欠陥)