Effect of Physical Properties of Al–Si Electrode Films on the Deformation Behaviors and the Strength of Thick Al Wire Bonds during Thermal Cycle Test

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概要

• 論文の詳細を見る

• The deformation behaviors of Al–Si films and the strength change of Al wire bonds on Al–Si films during heating and cooling cycles have been investigated as a function of substrate temperature of the sputtering process; the purpose was to clarify reliability of both Al wire bonds and Al–Si films for use in insulated gate bipolar transistor (IGBT) modules. The extent of deformation in Al–Si films sputtered at 593 K during heating and cooling cycles was the smallest among films sputtered at room temperature (RT), 473 K, and 593 K. The strength of Al wire bonds on Al–Si films sputtered at the three temperatures was the highest for Al–Si films sputtered at 593 K. The reliability of Al wire bonds on Al–Si films formed at 593 K was about two times higher than the bond reliability on Al–Si films formed at RT and 473 K.

• 2009-06-25

著者

• Onuki Jin

  Department Of Electronic And Information Systems Faculty Of Systems Science And Technology Akita Pre

• Tomota Yo

  Institute Of Applied Beam Science Graduate School Of Science And Engineering Ibaraki University

• Kurosu Toshiki

  Power And Industrial Division Hitachi Ltd.

• Shimizu Yousuke

  Graduate School of Science and Engineering, Ibaraki University, 4-12-1 Nakanarusawa, Hitachi, Ibaraki 316-8511, Japan

• Tomota Yo

  Institute of Applied Beam Science, Graduate School of Science and Engineering, Ibaraki University, 4-12-1 Nakanarusawa, Hitachi, Ibaraki 316-8511, Japan

• Kurosu Toshiki

  Power and Industrial Division, Hitachi, Ltd., 5-2-2 Omika, Hitachi, Ibaraki 319-1221, Japan

• Khoo Khyou

  Department of Materials Science, Faculty of Engineering, Ibaraki University, 4-12-1 Nakanarusawa, Hitachi, Ibaraki 316-8511, Japan

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