Filling 80-nm-Wide and High-Aspect-Ratio Trench with Pulse Wave Copper Electroplating and Observation of the Microstructure
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概要
- 論文の詳細を見る
To completely fill 80-nm-wide trenches with high-aspect-ratio (${>}6$) Cu electroplating, we investigated the influence of pulse wave electroplating conditions. Peak current density and current-off time during pulse wave plating were found to affect bottom-up filling. Bottom-up filling was confirmed to occur when peak current density, current-on time and current-off time were 100 mA/cm2, 3 and 300 ms, respectively. The microstructure of the trench was observed before and after annealing at 673 K by transmission electron microscope. After annealing, the grain size increases and grains cross the trench width. The size of grains formed by pulse wave plating before and after annealing were 37.5 and 96 nm, respectively. These values were similar to those for DC plating. Pulse wave electroplating is, therefore, promising as a step in the dual damascene process for fabricating very narrow high-aspect-ratio Cu wiring.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-11-15
著者
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Onuki Jin
Department Of Electronic And Information Systems Faculty Of Systems Science And Technology Akita Pre
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Akahoshi Haruo
Hitachi Research Laboratory Hitachi Ltd.
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SAITO Tatsuyuki
Micro Device Division, Hitachi Ltd.
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NAGANO Takahiro
Intellexres Laboratory
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Khoo Khyoupin
Department Of Materials Science And Engineering Ibaraki University
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Haba Toshio
Hitachi Research Laboratory Hitachi Ltd.
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Chonan Yasunori
Department Of Electronics And Information System Faculty Of System Science And Technology Akita Pref
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Aoyama Takashi
Department Of Computational Science Kanazawa University
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Haba Toshio
Hitachi Research Laboratory, Hitachi Ltd., Hitachi, Ibaraki 319-1292, Japan
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Akahoshi Haruo
Hitachi Research Laboratory, Hitachi Ltd., Hitachi, Ibaraki 319-1292, Japan
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Khoo Khyoupin
Department of Materials Science and Engineering Ibaraki University, Hitachi, Ibaraki 316-8511, Japan
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Aoyama Takashi
Department of Chemistry, Faculty of Science, The University of Tokyo
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