Filling a Narrow and High Aspect-Ratio Trench with Electro-Cu Plating
スポンサーリンク
概要
- 論文の詳細を見る
- Japan Institute of Metalsの論文
- 2006-05-20
著者
-
ONUKI Jin
Department of Materials Science and Engineering, Ibaraki University
-
Onuki Jin
Akita Prefectural University
-
Koizumi M
Department Of Electronics And Information Systems Faculty Of Systems Science And Technology Akita Pr
-
AKAHOSHI Haruo
Hitachi Research Laboratory, Hitachi Ltd.
-
Onuki J
Dep. Of Materials Sci. And Engineering Ibaraki Univ.
-
Onuki J
Akita Prefectural Univ. Honjo Jpn
-
Onuki Jin
Department Of Electronic And Information Systems Faculty Of Systems Science And Technology Akita Pre
-
Nishida Takashi
Central Research Laboratory Hitachi Ltd.
-
KOMIYAMA Takao
Department of Electronics and Information Systems, Faculty of Systems Science and Technology, Akita
-
CHONAN Yasunori
Department of Electronics and Information Systems, Faculty of Systems Science and Technology, Akita
-
Khoo Khyoupin
Graduate School Of Science And Engineering Ibaraki University
-
Komiyama Takao
Department Of Electronic And Information Systems Faculty Of Systems Science And Technology Akita Pre
-
Akahoshi Haruo
Hitachi Research Laboratory Hitachi Ltd.
-
Nagano Tomohiro
Department Of Physics Faculty Of Sciense And Technology Science University Of Tokyo
-
KHOO Khyoupin
Department of Materials Science and Engineering, Ibaraki University
-
NAGANO Takahiro
Intellexres Laboratory
-
ITABASHI Takeyuki
Advanced Research Laboratory, Hitachi Ltd.
-
SAITO Tatuyuki
Hitachi, Ltd., Hitachi Device Development Center
-
Saito Tatuyuki
Micro Device Division Hitachi Ltd.
-
Khoo Khyoupin
Department Of Materials Science And Engineering Ibaraki University
-
Chonan Yasunori
Department Of Electronics And Information System Faculty Of System Science And Technology Akita Pref
-
Nagano Takahiro
Semiconductor And Integrated Circuits Division Hitachi Ltd.
-
Itabashi Takeyuki
Advanced Research Laboratory Hitachi Ltd.
関連論文
- Impact of High Heating Rate, Low Temperature, and Short Time Annealing on the Realization of Low Resistivity Cu Wire
- Mechanical and Dielectric Properties of a New Polymer Blend Composed of 1, 2-Bis (vinylphenyl) ethane and Thermosetting Poly (phenylene ether) Copolymer Obtained from 2, 6-Dimethylphenol and 2-Allyl-6-methylphenol
- Low Dielectric Loss Copolymer Obtained from 2,6-Dimethylphenol and 2-Allyl-6-methylphenol via Cu-catalyzed Oxidative Coupling Polymerization
- Enhanced Degradation During Static Stressing of a Metal Oxide Semiconductor Field Effect Transistor Embedded in a Circuit
- A 6.93-μm^2 Full CMOS SRAM Cell Technology for 1.8-V High-Performance Cache Memory
- Large 1/f Noise in Polysilicon TFT Loads and its Effects on the Stability of SRAM Cells
- Large 1/f Noise in Polysilicon TFT Loads and Its Effects on the Stability of SRAM Cells
- A 6-ns 4-Mb CMOS SRAM with Offset-Voltage-Insensitive Current Sense Amplifiers(Special Issue on the 1994 VLSI Circuits Symposium)
- High-Temperature Thick Al Wire Bonding Technology for High-Power Modules
- High-Strength and High-Speed Bonding Technology using Thick Al-Ni Wire
- Development of A New High-Frequency, High-Peak Current Power Source for High Constricted Arc Formation
- Molecular Dynamics Simulation of Grain Growth of Cu Film : Effects of Adhesion Strength between Substrate and Cu Atoms
- Molecular Dynamics Simulation of Void Generation during Annealing of Copper Wiring
- Joining of Oxide Dispersion Strengthened Ni Based Super Alloys
- Influence on the Electro-Migration Resistance by Line Width and Average Grain Size along the Longitudinal Direction of Very Narrow Cu Wires
- Microstructures of 50-nm Cu Interconnects along the Longitudinal Direction
- Influence of Grain Size Distributions on the Resistivity of 80nm Wide Cu Interconnects
- Aspect ratio dependence of the resistivity of fine line Cu interconnects
- Filling a Narrow and High Aspect-Ratio Trench with Electro-Cu Plating
- Filling 80-nm-Wide and High-Aspect-Ratio Trench with Pulse Wave Copper Electroplating and Observation of the Microstructure
- Improvement of the Surface Layer of Steel Using Microwave Plasma Nitriding
- Microwave Plasma Nitriding of Hollow Tube Inner Wall
- The Low Temperature Bonding between Si and Electrode Using Sputtered Ag Films
- Influence of P Content in Electroless Plated Ni-P Alloy Film on Interfacial Structures and Strength between Sn-Zn Solder and Plated Au/Ni-P Alloy Film
- Influence of Phosphorus Concentration in Electroless Plated Ni-P Alloy Film on Interfacial Structures and Strength between Sn-Ag-(-Cu) Solder and Plated Ni-P Alloy Film
- Influence of Soldering Conditions on Void Formation in Large-area Solder Joints
- The Influence of Phosphorus Concentration of Electroless Plated Ni-P Film on Interfacial Structures in the Joints between Sn-Ag Solder and Ni-P Alloy Film
- A Void Free Soldering Process in Large-Area, High Power Insulated Gate Bipolar Transistor Modules
- Reliability Enhancement of Solder Joints Made by a Void Free Soldering process
- Interface Reaction between Solder and Plated Nickel Film
- Effect of Physical Properties of Al–Si Electrode Films on the Deformation Behaviors and the Strength of Thick Al Wire Bonds during Thermal Cycle Test
- Electrochemical and Simulative Studies of Trench Filling Mechanisms in the Copper Damascene Electroplating Process
- Determination of the Phase-Field Parameters for Computer Simulation of Heat Treatment Process of Ultra Thin Al Film
- High Expression of the Second Lysine Decarboxylase Gene, ldc, in Escherichia coli WC196 Due to the Recognition of the Stop Codon (TAG), at a Position Which Corresponds to the 33th Amino Acid Residue of σ^, as a Serine Residue by the Amber Suppressor,
- RpoS-Dependent Expression of the Second Lysine Decarboxylase Gene in Escherichia coli
- ^V and ^Mn Hyperfine Fields in the L2_1-Type Fe_2Mn_V_xSi and Fe_2T_Cr_xSi (T=V, Mn) Compounds
- Investigation of Low Loss and High Reliability Encapsulation Technology in Large-Area, High-Power Semiconductor Devices
- Computer Simulation of Silicon Nanoscratch Test
- A 5-mW, 10-ns Cycle TLB Using a High-Performance CAM with Low-Power Match-Detection Circuits (Special Issue on ULSI Memory Technology)
- Friction and Elongation of Al Electrodes due to Micro-Sliding between the Inner Mo Electrode and the Al Electrodes in High-Power Devices
- 多結晶銅薄膜の粒成長に及ぼす不純物の影響
- Effect of Additive-Free Plating and High Heating Rate Annealing on the Formation of Low Resistivity Fine Cu Wires
- PREFACE
- Reliability Enhancement of Thick Al-Cu Wire Bonds in IGBT Modules Using Al_2Cu Precipitates
- Void Generation Mechanism in Cu Filling Process by Electroplating for Ultra Fine Wire Trenches
- Aspect Ratio Dependence of the Resistivity of Fine Line Cu Interconnects
- Filling 80-nm-Wide and High-Aspect-Ratio Trench with Pulse Wave Copper Electroplating and Observation of the Microstructure
- Large 1/f Noise in Polysilicon TFT Loads and its Effects on the Stability of SRAM Cells
- Coating Adhesion Evaluation by Nanoscratching Simulation Using the Molecular Dynamics Method
- Observation of Microstructures in the Longitudinal Direction of Very Narrow Cu Interconnects
- Influence of Minimum Barrier Metal Thickness at Trenches on Void Formation in 50-nm-wide Cu Wiring
- ナノスケールダマシン銅配線のアニーリングによる構造変化