Effect of Additive-Free Plating and High Heating Rate Annealing on the Formation of Low Resistivity Fine Cu Wires

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概要

• 論文の詳細を見る
• 2011-09-01

著者

• TAMAHASHI Kunihiro

  Department of Materials Science and Engineering, Ibaraki University

• NAMEKAWA Takashi

  Department of Materials Science and Engineering, Ibaraki University

• Onuki Jin

  Department Of Materials Science And Engineering Ibaraki University

• 篠嶋 妥

  茨城大学工学部物質工学科

• 篠嶋 妥

  茨城大工

• Onuki J

  Dep. Of Materials Sci. And Engineering Ibaraki Univ.

• Onuki Jin

  Department Of Electronic And Information Systems Faculty Of Systems Science And Technology Akita Pre

• 篠嶋 妥

  Department Of Materials Science And Engineering Faculty Of Engineering Ibaraki University

• 篠嶋 妥

  茨城大

• Sasajima Yasushi

  Department Of Materials Science And Engineering Ibaraki University

• Namekawa Takashi

  Department Of Materials Science And Engineering Ibaraki University

• Tamahashi Kunihiro

  Department Of Materials Science And Engineering Ibaraki University

関連論文

• アルミニウム合金の結晶粒微細化とセミソリッドフォーミング
• Impact of High Heating Rate, Low Temperature, and Short Time Annealing on the Realization of Low Resistivity Cu Wire
• 溶融純アルミニウムの水素溶解度
• Al-Si合金鋳塊中の水素拡散とミクロ組織の関係
• Al-Cu合金鋳物中の水素拡散係数
• Al-Cu合金中の水素溶解度
• 5p-E4-10 Henley型2次元準結晶モデルの格子力学
• 3p-A3-9 2次元準周期的構造の成長のシミュレーション
• 26a-E-9 2次元ペンローズ・パタンの安定性
• 30a-RC-1 2次元ペンローズ・パタンの格子力学
• Cu超微細配線構造の安定性に及ぼす結晶方位の影響
• アルミニウム薄膜における粒成長のフェーズフィールドシミュレーション
• High-Temperature Thick Al Wire Bonding Technology for High-Power Modules
• High-Strength and High-Speed Bonding Technology using Thick Al-Ni Wire
• Development of A New High-Frequency, High-Peak Current Power Source for High Constricted Arc Formation
• Molecular Dynamics Simulation of Grain Growth of Cu Film : Effects of Adhesion Strength between Substrate and Cu Atoms
• Molecular Dynamics Simulation of Void Generation during Annealing of Copper Wiring
• 金属多層膜Cu/Ni,Cu/Agの超微小硬度
• 金属多層膜の作製とその構造評価
• Joining of Oxide Dispersion Strengthened Ni Based Super Alloys
• Influence on the Electro-Migration Resistance by Line Width and Average Grain Size along the Longitudinal Direction of Very Narrow Cu Wires
• Monte Carlo Simulation of Growth Process of Two-Dimensional Quasicrystal
• Computer Simulation of Growth Process of Binary Quasi Crystal
• Computer Simulation of Film Growth Process on the Two-Dimensional Penrose Pattern
• Microstructures of 50-nm Cu Interconnects along the Longitudinal Direction
• Influence of Grain Size Distributions on the Resistivity of 80nm Wide Cu Interconnects
• Filling a Narrow and High Aspect-Ratio Trench with Electro-Cu Plating
• Improvement of the Surface Layer of Steel Using Microwave Plasma Nitriding
• Microwave Plasma Nitriding of Hollow Tube Inner Wall
• The Low Temperature Bonding between Si and Electrode Using Sputtered Ag Films
• Influence of P Content in Electroless Plated Ni-P Alloy Film on Interfacial Structures and Strength between Sn-Zn Solder and Plated Au/Ni-P Alloy Film
• Influence of Phosphorus Concentration in Electroless Plated Ni-P Alloy Film on Interfacial Structures and Strength between Sn-Ag-(-Cu) Solder and Plated Ni-P Alloy Film
• Influence of Soldering Conditions on Void Formation in Large-area Solder Joints
• The Influence of Phosphorus Concentration of Electroless Plated Ni-P Film on Interfacial Structures in the Joints between Sn-Ag Solder and Ni-P Alloy Film
• Reliability Enhancement of Solder Joints Made by a Void Free Soldering process
• Interface Reaction between Solder and Plated Nickel Film
• シリコンのナノインデンテーションの計算機実験
• サーファクタント・エピタキシャル成長に関する計算機実験
• 30a-D-3 ペンローズパタン上における粒子の薄膜成長過程についての計算機実験
• Effect of Physical Properties of Al–Si Electrode Films on the Deformation Behaviors and the Strength of Thick Al Wire Bonds during Thermal Cycle Test
• Effect of additive-free plating and high heating rate annealing on the formation of low resistivity fine Cu wires
• サクシノニトリル-アセトン系有機モデル合金のデンドライト成長
• フェーズフィールド法によるAl-Zn二元合金のデンドライト成長シミュレーション
• フェーズフィールド法によるAl-Zn合金の一方向凝固シミュレーション
• Al系二元合金の等温デンドライト成長 : フェーズフィールド法と摂動理論との比較
• フェーズフィールド法によるAl-Cu二元合金の等温デンドライト成長シミュレーション
• フェーズフィールド法による Al 系二元合金の等温凝固過程のシミュレーション
• 硫化物添加による過共晶Al-Si合金の改良処理効果
• 1方向凝固させたAl-Si合金鋳塊中の水素拡散
• モンテカルロ法による薄膜形成過程のシミュレ-ション
• Al-CuおよびAl-Zn合金のデンドライト成長機構とフェーズフィールド法シミュレーション
• Determination of the Phase-Field Parameters for Computer Simulation of Heat Treatment Process of Ultra Thin Al Film
• Phase Field Simulation on Directional Solidification of Succinonitrile(SCN)-Acetone Organic Model Alloy
• P添加過共晶Al-Si合金の改良処理効果と初晶Si晶出開始温度
• P添加過共晶Al-Si合金の初晶および共晶Si微細化効果
• 金属多層膜の超弾性効果--計算機シミュレ-ションによる検討
• フェーズフィールド法による凝固シミュレーション
• 多層薄膜の熱伝導 : 分子動力学法による研究
• Monte Carlo Simulation of Grain Boundary Cross Effect on Hydrogen Diffusivity in Aluminum
• Investigation of Low Loss and High Reliability Encapsulation Technology in Large-Area, High-Power Semiconductor Devices
• Monte Carlo Simulation of Diffusion Process on Quasi-Lattice
• Computer Simulation of Silicon Nanoscratch Test
• Friction and Elongation of Al Electrodes due to Micro-Sliding between the Inner Mo Electrode and the Al Electrodes in High-Power Devices
• 多結晶銅薄膜の粒成長に及ぼす不純物の影響
• Effect of Additive-Free Plating and High Heating Rate Annealing on the Formation of Low Resistivity Fine Cu Wires
• PREFACE
• Reliability Enhancement of Thick Al-Cu Wire Bonds in IGBT Modules Using Al_2Cu Precipitates
• Void Generation Mechanism in Cu Filling Process by Electroplating for Ultra Fine Wire Trenches
• Aspect Ratio Dependence of the Resistivity of Fine Line Cu Interconnects
• Filling 80-nm-Wide and High-Aspect-Ratio Trench with Pulse Wave Copper Electroplating and Observation of the Microstructure
• Coating Adhesion Evaluation by Nanoscratching Simulation Using the Molecular Dynamics Method
• Observation of Microstructures in the Longitudinal Direction of Very Narrow Cu Interconnects
• Influence of Minimum Barrier Metal Thickness at Trenches on Void Formation in 50-nm-wide Cu Wiring
• Molecular Dynamics Study of the Structural Changes of Ultra-fine Particles
• ナノスケールダマシン銅配線のアニーリングによる構造変化
• 29p-LG-9 2次元ペンローズ・パタンの格子力学(II)(格子欠陥)

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