Observation of Microstructures in the Longitudinal Direction of Very Narrow Cu Interconnects

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概要

• 論文の詳細を見る

• We have succeeded in observing the longitudinal microstructure of very narrow Cu interconnects for the first time. We found that the average grain sizes along the longitudinal direction of Cu interconnect trenches increased with increasing line width, and they were 278 nm for 80 nm, 303 nm for 100 nm, and 346 nm for 180 nm wide interconnects. Ratios of the average grain size to line width were 3.5 for 80 nm, 3.03 for 100 nm, and 1.9 for 180 nm line widths.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2006-08-25

著者

• Onuki Jin

  Department Of Electronic And Information Systems Faculty Of Systems Science And Technology Akita Pre

• Tobita Toshimi

  Hitachi Kyowa Engineering Ltd.

• Akahoshi Haruo

  Hitachi Research Laboratory Hitachi Ltd.

• NAGANO Takahiro

  Department of materials science and Engineering, Ibaraki University

• SAITO Tatsuyuki

  Micro Device Division, Hitachi Ltd.

• Khoo Khyoupin

  Department Of Materials Science And Engineering Ibaraki University

• Chonan Yasunori

  Department Of Electronics And Information System Faculty Of System Science And Technology Akita Pref

• Ishikawa Kensuke

  Micro Device Division Hitachi Ltd.

• Chiba Masahiro

  Hitachi Kyowa Engineering Co., Ltd., Hitachi, Ibaraki 319-1292, Japan

• Khoo Khyoupin

  Department of Materials Science and Engineering, Ibaraki University, Hitachi, Ibaraki 316-8511, Japan

• Chonan Yasunori

  Department of Electronics and Information System, Faculty of System Science and Technology, Akita Prefectural University, Honjyo, Akita 015-0055, Japan

• Nagano Takahiro

  Department of Materials Science and Engineering, Ibaraki University, Hitachi, Ibaraki 316-8511, Japan

• Saito Tatsuyuki

  Micro Device Division, Hitachi, Ltd., Ome, Tokyo 198-8512, Japan

• Chiba Masahiro

  Hitachi Kyowa Engineering, Ltd., Hitachi, Ibaraki 319-1292, Japan

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• PREFACE
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• Influence of Minimum Barrier Metal Thickness at Trenches on Void Formation in 50-nm-wide Cu Wiring
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