Large 1/f Noise in Polysilicon TFT Loads and its Effects on the Stability of SRAM Cells
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概要
- 論文の詳細を見る
We have observed very large drain current fluctuations over time in polysilicon thin film transistors (TFTs). The noise with 1/f power spectra in TFTs is found to be about 104 times larger than that in single-crystalline Si metal oxide semiconductor (MOS) transistors. The influence of 1/f noise in TFTs on static random access memory (SRAM) cell stability is clarified for the first time. Maintaining a high on-current and lowering of the grain-boundary barrier are found to be essential for increasing stability.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1996-02-28
著者
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Aoki Masaaki
Central Research Laboratory Hitachi Ltd.
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HASHIMOTO Takashi
Semiconductor and Integrated Circuits Division, Hitachi, Ltd.
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Yamanaka Toshiaki
Central Research Laboratory Hitachi Ltd.
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Nagano Takahiro
Semiconductor And Integrated Circuits Division Hitachi Ltd.
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Yamanaka Toshiaki
Central Research Laboratory, Hitachi, Ltd., 1-280, Higashi-koigakubo, Kokubunji, Tokyo 185, Japan
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Hashimoto Takashi
Semiconductor and Integrated Circuits Division, Hitachi, Ltd.,
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Nagano Takahiro
Semiconductor and Integrated Circuits Division, Hitachi, Ltd.,
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