Fabrication of 0.1μm Complementary Metal-Oxide-Semiconductor Devices : Micro/nanofabrication and Devices
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-04-30
著者
-
Ishii T
Idemitsu Material Co. Ltd. Chiba Jpn
-
Aoki M
Hitachi Ltd. Tokyo Jpn
-
Aoki Masaru
Department Of Chemistry Graduate School Of Arts And Sciences The University Of Tokyo
-
Aoki Masaaki
Central Research Laboratory Hitachi Ltd.
-
Aoki M
Univ. Tokyo Tokyo Jpn
-
Ishii T
Kyoto Univ. Kyoto Jpn
-
YOSHIMURA Toshiyuki
Central Research Laboratory, Hitachi, Ltd.
-
OKAZAKI Shinji
ASET EUVL Laboratory
-
Ishii T
Tokyo Univ. Agriculture And Technol. Tokyo Jpn
-
Isozaki Tadaaki
Central Research And Development Laboratory Showa Shell Sekiyu K. K.
-
Aoki Masaru
Advanced Display Incorporated
-
OKAZAKI Shinji
Central Research Laboratory, Hitacti, Ltd.
-
Iga Toru
R&d Center Idemitsu Material Co. Ltd.
-
Aoki M
Ion Engineering Res. Inst. Corp. Osaka Jpn
-
Okazaki S
Aset Euvl Laboratory
-
Yoshimura T
Kyushu Univ. Fukuoka Jpn
-
Okazaki S
Japan Broadcasting Corp. Tokyo Jpn
-
Okazaki Shinji
Central Research Lab. Hitachi Ltd.
-
ISHII Tatsuya
Central Research Laboratory, Hitachi, Ltd.
-
ISHII Takugo
Institute fur Laser-Physik, University of Hamburg
-
Yoshimura Toshiyuki
Central Research Laboratory Hitachi Ltd.
-
Ishii T
Institut Fur Laser-physik Universtat Of Hamburg
-
Yoshimura T
Osaka Univ. Osaka Jpn
関連論文
- Successive Phase Transitions in Antiferroelectric Liquid Crystal 4-(1-methylheptyloxycarbonyl) phenyl 4'-octylcarbonyloxybiphenyl-4-carboxylate (MHPOCBC)
- Effects of Stoichiometry and A-site Substitution on the Electrical Properties of Ferroelectric YMnO_3
- Antiferroelectric Liquid Crystals Having a Chiral Ring Structure
- Synthesis and Properties of Dimeric Antiferroelectric Liquid Crystals
- Magnetic and Superconducting Properties of Ba_2HoCu_3O_ under High Magnetic Field : Electrical Properties of Condensed Matter
- Dielectric Behavior and the Devil's Staircase in the SmC^*_α Phase of an Antiferroelectric Liquid Crystal, 4-(1-methylheptyloxycarbonyl)phenyl 4' -octylearbonyloxybiphenyl-4-carboxylate
- Competition between Ferroelectric and Antiferroelectric Interactions Stabilizing Varieties of Phases in Binary Mixtures of Smectic Liquid Crystals
- Reentrant Antiferroelectric Phase in 4-(1-Methylheptyloxycarbonyl)phenyl 4'-Octylbiphenyl-4-Carboxylate
- Large 1/f Noise in Polysilicon TFT Loads and its Effects on the Stability of SRAM Cells
- Large 1/f Noise in Polysilicon TFT Loads and Its Effects on the Stability of SRAM Cells
- Crystal Structure and Superconductivity in Ba_2Y_Pr_xCu_3O_ : Electrical Properties of Condensed Matter
- Preparation and Superconducting Properties of Tetragonal Ba_2YCu_3O_ and Ba_2EuCu_3O_ with Low Oxygen-Defect Concentration (0.05
- Fabrication of Less Than a 10 nm Wide Polycrystalline Silicon Nano Wire
- Liquid-Phase Epitaxial Growth of ZnSe on ZnTe Substrate
- Characteristics of Platinum-Palladium Alloy Film for X-Ray Mirrors
- Measurement of Temperature Rise of Quartz Plate during Synchrotron Radiation Irradiation Using Infrared Camera(Instrumentation, Measurement, and Fabrication Technology)
- Construction of Dynamic Conoscope Observation System Using CCD Camera and Image Processor
- A Trial Construction of an Ultrasonic Motor with Fluid Coupling
- Low-Energy Electron Transmission Spectroscopy of Thin Films of Chloroaluminum Phthalocyanine on MoS_2
- Conformational Characteristics of Biphenylene-Ether-Ketone
- Molecular Motions of Non-Crystalline BEK
- Development of Biaxially Stretched Film for Flexible Printed Circuit Boards
- Nanofabrication with a Novel EB System with a Large and Stable Beam Current
- Lidar Network System for Monitoring the Atmospheric Environment in Jakarta City
- Fabrication of YMnO_3 Thin Films on Si Substrates by a Pulsed Laser Deposition Method
- Modeling of In-Plane Distortion of Extreme Ultraviolet Lithography Mask in Flat State
- Thermal In-Plane Distortion Model of Mask for Extreme Ultraviolet Lithography during Periodic Scanning Exposure
- Approach to Patterning of Extreme Ultraviolet Lithography Masks using Ru Buffer Layer : Surfaces, Interfaces, and Films
- Thermal Behavior along Depth of Extreme Ultraviolet Lithography Mask during Dry Etching : Surfaces, Interfaces, and Films
- Temperature Rise of Extreme Ultraviolet Lithography Mask Substrate during Dry Etching Process : Semiconductors
- Estimation of Extreme Ultraviolet Power and Throughput for Extreme Ultraviolet Lithography
- Theoretical Analysis of Placement Error due to Absorber Pattern on Extreme Ultraviolet Lithography Mask
- Effect of Molecular-Weight Distributions of Resist Polymers and Process Control on Lithography for 0.1μm and Below
- Nanometer Electron Beam Lithography with Azide-Phenolic Resin Resist Systems
- Correlation of Nano Edge Roughness in Resist Patterns with Base Polymers
- Optical Performance of KrF Excimer Laser Lithography with Phase Shift Mask for Fabrication of 0.15 μm and Below
- Novel Process for Direct Delineation of Spin on Glass (SOG)
- Transmission Electron Microscopy Observation and Simulation Analysis of Defect-Smoothing Effect of Molybdenum/Silicon Multilayer Coating for Extreme Ultraviolet Lithography Masks
- In-Situ Observation of Oxygen Exposed Hydrogen Terminated Silicon Surfaces
- Nanofabrication with Langmuir-Blodgett Films of a Chemical Amplification Resist SAL601
- Formation of Fractionated Novolak Resin Langmuir-Blodgett Films
- Directional-Coupled Optical Switch between Stacked Waveguide Layers Using Electro-Optic Polymer
- Selectively Aligned Polymer Film Growth on Obliquely Evaporated SiO_2 Pattern by Chemical Vapor Deposition
- Fabrication of 0.1μm Complementary Metal-Oxide-Semiconductor Devices : Micro/nanofabrication and Devices
- Fabrication of 0.1μm Complementary Metal-Oxide-Semiconductor Devices
- GaN Thin Film Growth on LiGaO_2 Substrate with a Multi-Domain Structure
- >LiGa0_2 Single Crystals for a Substrate of Hexagonal GaN Thin Films
- Integrated Optical Pickup with Highly Sensitive Servo Signal Detection : Head Technology
- Integrated Optical Pickup with Highly Sensitive Servo Signal Detection
- Electron Beam Direct Writing Technology for 64-Mb DRAM LSIs : Lithography Technology
- Electron Beam Direct Writing Technology for 64-Mb DRAM LSIs
- Relativistic Calculations of Complete 4fn Energy Level Schemes of Free Trivalent Rare-Earth Ions
- Energy Level Structure of LiYF_4 : Dy^ : Crystal Field Analysis
- Calculations of Complete 4f^n and 4f^5d^1 Energy Level Schemes of Free Trivalent Rare-Earth Ions
- Theoretical Calculation for Multiplet Structure of Chromium Ion Pair in Ruby
- Calculation of Multiplet Structure of Ruby Using Explicit Effective Hamiltonian
- An Improved Method for Wind Measurements with a Conical-Scanning Correlation Lidar
- Analysis of Covalent Effects on the Multiplet Structure of Ruby Based on First-Principles Cluster Calculations
- Observation of Mixed Fatty Acid Monolayer at the Air-Water Interface Using Phase Contrast Microscopy
- Observation of Organic Molecules by Scanning Tunneling Microscope
- Heuristic Method for Phase-Conflict Minimization in Automatic Phase-Shift Mask Design
- Analysis of Nonplanar Topography Effects of Phase Shift Masks on Imaging Characteristics
- 0.13 μm Pattern Delineation Using KrF Excimer Laser Light
- Algorithm for Phase-Shift Mask Design with Priority on Shifter Placement
- Phase-Shifting Technology for ULSI Patterning (Special Issue on Opto-Electronics and LSI)
- A Novel Optical Lithography Technique Using the Phase-Shifter Fringe
- Formation of a Positive Photoresist Thin Film by Spin Coating: Influence of Atmospheric Humidity
- Formation of a Positive Photoresist Thin Film by Spin Coating:Influence of Atmospheric Temperature
- Thin-Film Formation by Spin Coating: Characteristics of a Positive Photoresist
- Electrical and Optical Properties of ZnS:Sb, Te Grown from Sb_Te_ Solution
- Photoluminescence in ZnSe:Te Prepared by Solution Growth
- Photoluminescence in Sb-Doped ZnS
- Resonant Raman Scattering in ZnS
- Liquid-Phase Epitaxial Growth of ZnSe Using Sb_Se_ as Solvent
- Conductance Anomalies and Electronic States in Silicon Inversion Layers near Threshold at Low Temperatures
- The Possibility of Quantized Conductance at Temperatures above 4.2K in Bulk Si MOSFETs
- Proposal for the Coma Aberration Dependent Overlay Error Compensation Technology
- Sub-Halfmicron Lithography Using a High-Contrast i-Line CEL
- Patients with severe liver cirrhosis followed up by L-[1-^C] phenylalanine breath test
- EB call projection Lithography : Lithography Technology
- Synthesis and Properties of Deuterated Antiferroelectric Liquid Crystals
- Characteristics of a Bidirectional Rotary Ultrasonic Motor Using Obliquely Polarized Piezoelectric Transducers
- Terrestrial Gamma Radiation in Kochi Prefecture, Japan
- The Importance of the Electric Interaction for Stabilizing the Antiferroelectric Smectic Liquid-Crystalline Phase
- Electron Beam Mask Fabrication for MOSLSI's with 1.5 μm Design Rule : A-1: ADVANCED LITHOGRAPHY AND PROCESS
- Electron Beam Enhanced Surface Photovoltage
- Fabrication of Deep Sub-μm Narrow-Channel Si-MOSFET's with Twofold-Gate Structures : Microfabrication and Physics
- A Novel Probe Size Measurement Method for a Fine Electron Beam : Inspection and Testing
- Mirrorless Microcavity Spontaneously Formed in Ferroelectric Liquid Crystals
- Effect of EB Acceleration Voltage and Beam Sharpness on Process Latitude of 0.2 μm Lines
- Mechanism of Yellow Luminescence in GaN
- A Novel Probe Size Measurement Method for a Fine Electron Beam
- Photoluminescenece in P-Doped GaN
- Thermoreflectance in GaN
- Phonon Sidebands in GaP : Bi
- Formation of a Positive Photoresist Thin Film by Spin Coating: Influence of Atmospheric Temperature
- Large 1/f Noise in Polysilicon TFT Loads and its Effects on the Stability of SRAM Cells
- Measurement of Temperature Rise of Quartz Plate during Synchrotron Radiation Irradiation Using Infrared Camera
- Estimation of Extreme Ultraviolet Power and Throughput for Extreme Ultraviolet Lithography
- Electronic spectra of tetraphenylporphinatoiron(III) methoxide.