Conductance Anomalies and Electronic States in Silicon Inversion Layers near Threshold at Low Temperatures
スポンサーリンク
概要
- 論文の詳細を見る
The conductivity of w-type inversion layers in silicon MOS field-effect transistorsnear threshold is studied as a function of electron concentration n, temperatureand magnetic field. In the speci?aaens with a SJ118ll amount of disorder at theinterfaces, the inversion layer conductivity at low concentrations zz.<10" cm-"shows a sharp naaximum at around ]3K. This 8I10I1181OUS enhanceunent ofinversion layer conductivity is discussed relating to the Wigner crystallization.
- 社団法人日本物理学会の論文
- 1977-05-15
著者
-
Aoki Masaaki
Central Research Laboratory Hitachi Ltd.
-
KATAYAMA Yoshifumi
Central Research Laboratory, Hitachi Ltd.
-
NARITA Koziro
Central Research Laboratory,Hitachi Ltd.
-
SHIRAKI Yasuhiro
Central Research Laboratory,Hitachi Ltd.
-
F.KOMATSUBARA Kiichi
Central Research Laboratory,Hitachi Ltd.
-
Shiraki Yasuhiro
Central Research Laboratory Hitachi Ltd.
-
Narita Koziro
Central Research Laboratory Hitachi Ltd.
-
F.komatsubara Kiichi
Central Research Laboratory Hitachi Ltd.
-
Katayama Yoshifumi
Central Research Laboratory Hitachi Ltd.
-
Katayama Yoshifumi
Central Research Laboratory
-
Shiraki Yasuhiro
Central Research Laboratory
-
AOKI Masaaki
Central Research Laboratory,Hitachi Ltd.
関連論文
- Large 1/f Noise in Polysilicon TFT Loads and its Effects on the Stability of SRAM Cells
- Large 1/f Noise in Polysilicon TFT Loads and Its Effects on the Stability of SRAM Cells
- Controlled Atomic Layer Doping and ALD MOSFET Fabrication in Si
- Fabrication of 0.1μm Complementary Metal-Oxide-Semiconductor Devices : Micro/nanofabrication and Devices
- Fabrication of 0.1μm Complementary Metal-Oxide-Semiconductor Devices
- Infrared Spectra of Amorphous Silicon-Fluorine Alloys Prepared by Sputtering in Fluorosilane-Argon Gas Mixture
- Conductance Anomalies and Electronic States in Silicon Inversion Layers near Threshold at Low Temperatures
- The Possibility of Quantized Conductance at Temperatures above 4.2K in Bulk Si MOSFETs
- Stopping Cross-Sections of Rare Gases in Amorphous Silicon for MeV Energy Helium Ions
- A 10 ×10 Polycrystalline-Silicon Thin-Film Transistor Matrix for Liquid-Crystal Display : C-4: THIN FILM DEVICES
- A New Two-Dimensional Electron Gas Field-Effect Transistor Fabricated on Undoped AlGaAs-GaAs Heterostructure
- ESR Study of Tb^ and Pr^ in La_2O_2S Single Crystals
- ESR Studies of Gd^ Ion in La_2O_2S Single Crystal
- Control of Optical Gap in a-Si_xC_: H Alloy Films Produced by Reactive Sputtering Method : II-2: AMORPHOUS FILM PREPARATION AND CHARACTERIZATION (II)
- GaAs_P_x Light Emitting Diodes Produced by Zn Ion Implantation. : I. Dose Dependence of Properties of Implanted Diodes
- Structure Analysis of Oval Defect on Molecular Beam Epitaxial GaAs Layer by Cross-Sectional Transmission Electron Microscopy Observation
- GaAs_P_x Light Emitting Diodes Produced by Zn Ion Implantation. : II. Photoluminescence of p-Type Layers Formed by Ion Implantation and Diffusion
- XPS Determination of Amount of Incorporated Rare Gas in Amorphous Silicon Films Produced with Reactive Sputtering Method
- Observation of Si-2p Level Shift in Hydrogenated Amorphous Silicon by X-Ray Photoelectron Spectroscopy
- Photoluminescence Observation of Defects in Silicon : B-3: CRYSTAL GROWTH AND DEFECTS
- A New Short Channel MOSFET with an Atomic-Layer-Doped Impurity-Profile (ALD-MOSFET) : B-3: NOVEL DEVICES
- Formation of Embedded Monocrystalline NiSi_2 Grid Layers in Silicon by MBE
- Large 1/f Noise in Polysilicon TFT Loads and its Effects on the Stability of SRAM Cells