Observation of Si-2p Level Shift in Hydrogenated Amorphous Silicon by X-Ray Photoelectron Spectroscopy
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概要
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The XPS spectra of hydrogenated amorphous silicon (a-Si:H) and amorphous silicon without hydrogen (a-Si) are studied in the Si-2p core level region as functions of in-situ heat treatments. The Si-2p binding energy in a-Si:H does not change until 400℃ heating and shifts to the lower energy side by 0.15 eV after 500℃ heat treatment where most of hydrogen incorporated evolves, while the Si-2p binding energy in a-Si without hydrogen remains unchanged by heat treatment up to 600℃, The results suggest that incorporated hydrogen affects not only Si atoms directly bonded to hydrogen but also the remote Si atoms in the Si-Si network.
- 社団法人応用物理学会の論文
- 1980-07-05
著者
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Usami Katsuhisa
Hitachi Research Laboratory Hitachi Ltd.
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Usami Katsuhisa
Central Research Laboratory Hitachi Ltd.
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SHIMADA Toshikazu
Central Research Laboratory, Hitachi Ltd.
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KATAYAMA Yoshifumi
Central Research Laboratory, Hitachi Ltd.
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Shimada Toshikazu
Central Research Laboratory
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Katayama Yoshifumi
Central Research Laboratory
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