Formation of Embedded Monocrystalline NiSi_2 Grid Layers in Silicon by MBE
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概要
- 論文の詳細を見る
Overgrowth of monocrystalline silicon films has been achieved by the molecular beam epitaxy technique on patterned NiSi_2 layers which were epitaxially grown on Si(111) substrates. The embedded NiSi_2 grid layer can be used as the gate in a permeable base transistor and can form buried electrodes in other novel devices.
- 社団法人応用物理学会の論文
- 1984-07-20
著者
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Ishizaka Akitoshi
Central Research Laboratory Hitachi Ltd.
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Shiraki Yasuhiro
Central Research Laboratory
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