Growth Modes of MBE and SPE in the Heteroepitaxy of a NiSi_2 Layer on Si(111) Substrate : Condensed Matter

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概要

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• The growth mechanism of NiSi_2/Si(111) heteroepitaxy by molecular beam epitaxy (MBE) was studied as a function of substrate temperature. Growth modes of the epitaxy were classified into these kinds: 1) two-dimensional epitaxy at ledge, 2) two-dimensional epitaxy at kink, and 3) three-dimensional epitaxy. The temperature regions corresponding to these growth modes were 〜1/4- 〜1/2T_m, 〜1/2- 〜3/4T_m, and ≳ 3/4T_m, respectively, where T_m (゜K) is the melting point of NiSi_2. By comparing these results with those of the various MBE material systems, e.g., Si/Si, GaAs/GaAs, Ga_<0.7>Al_<0.3>As/GaAs and InP/InP systems, the relation between growth mode and epitaxial temperature range was found to be almost the same. The epitaxial layers with high crystallinity and smooth surface morphology grew in the region of 2) of the above classification.

• 1988-06-20

著者

• Ishizaka Akitoshi

  Central Research Laboratory Hitachi Ltd.

• ISHIZAKA Akitoshi

  Central Research Laboratory, Hitachi Ltd.

関連論文

• Observation of 1-nm-High Structures on a Si (001) Surface Using a Differential Interference Optical Microscope
• Resonant Photoemission in Open and Closed 3d Shell Systems:Ni_xSi (x=3,2.5,2,1.5,1,and 0.5)
• Formation of Embedded Monocrystalline NiSi_2 Grid Layers in Silicon by MBE
• Growth Modes of MBE and SPE in the Heteroepitaxy of a NiSi_2 Layer on Si(111) Substrate : Condensed Matter

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