Structure Analysis of Oval Defect on Molecular Beam Epitaxial GaAs Layer by Cross-Sectional Transmission Electron Microscopy Observation
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概要
- 論文の詳細を見る
The fine structure of a surface defect on GaAs grown by molecular beam epitaxy (MBE) is analyzed by transmission electron microscopy (TEM) observing cross-sectional views of the specimen. The defect has a pyramid structure consisting of four {111} stacking fault planes whose Burgers vectors are a_o/6 <112>, a_o/6 <1^^-12>, a_o/6 <11^^-2> and a_o/6 <<11>^^^-2>. Because a defect of this type always starts at the GaAs substrate surface, the origin is thought to be a point defect or atomic contamination on the surface.
- 社団法人応用物理学会の論文
- 1984-11-20
著者
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KATAYAMA Yoshifumi
Central Research Laboratory, Hitachi Ltd.
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Shiraki Yasuhiro
Central Research Laboratory Hitachi Ltd.
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Nagata Fumio
Central Research Laboratory Hitachi Ltd
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Kakibayashi Hiroshi
Central Research Laboratory Hitachi Ltd
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Katayama Yoshifumi
Central Research Laboratory
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Shiraki Yasuhiro
Central Research Laboratory
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KATAYAMA Yoshifumi
Central Research Laboratory, Hitachi, Ltd.
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