Comparison of Relaxation Process of Compressive and Tensile Strains in InGaAs Lattice-Mismatched Layers on InP Substrates

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This paper investigates the difference in crystal quality between strained-layer multiple quantum wells with compressive (+0.5%) and tensile strains (-0.5%). For the compressive strain, the photoluminescence intensity decreased and the length of fringe bending increased from 250 A to 500 A when the number of periods increased from 5 to 15. The amount of fringe bending increased when the InP thickness decreased, especially when the strain was compressive. We also investigated the relaxation process in an InGaAs layer as a function of the layer thickness (from 25 nm to 2μm). For a compressive strain (+1.1%), misfit dislocations were observed near the interface between InGaAs and InP substrate. On the other hand, for a tensile strain (-1.1%), we observed cracks instead of misfit dislocations. Moreover, the cracks were considered to increase the X-ray full width at half maximum of both the InGaAs lattice-mismatched layer and the InP substrate.
社団法人応用物理学会の論文
1994-01-15