Depth Profiling of Superstructures by μ-AES Utilizing Angle-Lapped Specimens: Techniques, Instrumentations and Measurement
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概要
- 論文の詳細を見る
Line scanning of an angle-lapped specimen by microprobe Auger electron spectroscopy (μ-AES) is proposed for depth profiling of superstructures. A multilayer structure enlarged several hundred times is exposed on an angle-lapped surface, and depth profiling is carried out using electron beam scanning. This method it possible to measure the compositional depth profiles of a large depth region that is over several thousand Å within only several minutes. The composition profile of Ga in a GaAs/Al_xGa_<1-x>As superstructure is measured with the depth resolution of 80 Å. The thinnest detectable GaAs layer is 15 Å.
- 社団法人応用物理学会の論文
- 1988-03-20
著者
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MATSUNAGA Fumiko
Central Research Laboratory, Hitachi, Ltd.
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Nagata Fumio
Central Research Laboratory Hitachi Ltd
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Kakibayashi Hiroshi
Central Research Laboratory Hitachi Ltd
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Matsunaga Fumiko
Central Research Laboratory Hitachi Ltd
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KAKIBAYASHI Hiroshi
Central Research Laboratory, Hitachi, Ltd
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