Simulation Studies of a Composition Analysis by Thickness-Fringe (CAT) in an Electron Microscope Image of GaAs/ Al_xGa_<1-x>As Superstructure
スポンサーリンク
概要
- 論文の詳細を見る
The intensity distribution of thickness fringes, observed at the edge of a cleaved chip of GaAs/ Al_xGa_<1-x>As superstructure using a transmission electron microscope, was computer-simulated by means of the dynamical theory of electron diffraction. It was theoretically verified that the distance of a thickness fringe from the edge of a chip systematically changes, depending on the Al composition (experimentally found by the present authors (H. Kakibayashi and F. Nagata: Jpn. J. Appl. Phys. 24 (1985) L905)). The precise composition profile in the heterointerface and the most suitable observation condition for a composition analysis were studied using the simulation technique.
- 社団法人応用物理学会の論文
- 1986-11-20
著者
-
Nagata Fumio
Central Research Laboratory Hitachi Ltd
-
Kakibayashi Hiroshi
Central Research Laboratory Hitachi Ltd
-
Nagata Fumio
Central Research Laboratory, Hitachi, Ltd.
関連論文
- Observation of Fe-Mn Oxidation Process Using Specimen Transfer Chamber and Ultrahigh-Vacuum Transmission Electron Microscope
- Influence of Ion Sputtering on Auger Electron Spectroscopy Depth-Profiling of GaAs / AlGaAs Superstructure
- Comparison of Microstructure of Cross-Sectional CoCr Thin Film Specimens Prepared by Fracture, Microtome, and Ion-Beam Thinning Methods
- Microstructure of CoCr Thin Films Prepared by Sputtering
- Microstructure of Visible Light Emitting Porous Silicon
- Crystal Structure Change of GaAs and InAs Whiskers from Zinc-Blende to Wurtzite Type
- Current Status and Future Trend of Analytical Instruments for Failure Analyses in Si Process
- Highly Accurate Composition Analysis of (Pb, Zr)TiO_3 Using a Scanning Electron Microscope/Energy Dispersive X-Ray Spectrometer
- High Resolution Electron Microscopy by an Incoherent Illumination Method
- Comparison of Relaxation Process of Compressive and Tensile Strains in InGaAs Lattice-Mismatched Layers on InP Substrates
- Strained Lattice Structure Analysis of InGaAsP Multilayers Using Thickness Fringes in Transmission Electron Microscopy Images
- High Resolution X-Ray Elemental Mapping Using 300-kV Field-Emission TEM
- Direct Observation of Strain Distribution in InP/In_Ga_xP Heterointerfaces by the Compositional Analysis by Thickness Fringe Method
- Observation of Fine Compositional Fluctuation in GaAs/AI_xGa_As Superstructure Using Composition Analysis by Thickness-Fringe (CAT) Method
- Three-dimensional STEM for observing nanostructures
- Position Alignment in Algebraic Reconstruction Method by Using Center of Gravity
- Simulation Study of Noise Influence in 3-Dimensional Reconstruction using High-Angle Hollow-Cone Dark-Field Transmission Electron Microscope Images
- Atomic Species Analysis and Three-Dimensional Observation by High-Angle Hollow-Cone Dark-Field Transmission Electron Microscopy
- Observation of Incoherent Images through Minute Fluctuations of Lens Excitation Current
- Influence of Substrate Misorientation on Surface Morphology of Be-Doped GaAs Grown by MBE
- Composition Dependence of Equal Thickness Fringes in an Electron Microscope Image of GaAs/Al_xGa_ As Multilayer Structure
- Simulation Studies of a Composition Analysis by Thickness-Fringe (CAT) in an Electron Microscope Image of GaAs/ Al_xGa_As Superstructure
- Structure Analysis of Oval Defect on Molecular Beam Epitaxial GaAs Layer by Cross-Sectional Transmission Electron Microscopy Observation
- New Structure on TiN(001) Cleaved Surfaces
- Depth Profiling of Superstructures by μ-AES Utilizing Angle-Lapped Specimens: Techniques, Instrumentations and Measurement
- Detection of Strain in InP/InGaP Superlattices by Dark-Field Electron Microscopy and Nano-Diffraction Technique
- Observation of OMVPE-Grown GaInP/GaAs Cross-Sections by Transmission Electron Microscopy
- Position dependence of the visibility of a single gold atom in silicon crystals in HAADF-STEM image simulation
- Observation of Wet Biological Materials in a High Voltage Electron Microscope
- Substrate Misorientation Effect on Be Transport during MBE Growth of GaAs