Observation of Fine Compositional Fluctuation in GaAs/AI_xGa_<1-x>As Superstructure Using Composition Analysis by Thickness-Fringe (CAT) Method
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概要
- 論文の詳細を見る
The fine compositional fluctuation in a GaAs/Al_xGa_<1-x>As superstructure grown by metal-organic chemical vapor deposition (MOCVD) was evaluated by using the composition analysis by thickness-fringe (CAT) method. A sinusoidally oscillating Al composition in the growth direction was observed to have a period of 1〜4 nm and in the range x=0.15 to 0.5. The CAT method was successfully applied to measure such fine compositional fluctuations with a high spacial resolution.
- 社団法人応用物理学会の論文
- 1987-05-20
著者
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Ono Y
Central Research Laboratory Hitachi Ltd
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Nagata Fumio
Central Research Laboratory Hitachi Ltd
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ONO Yuichi
Central Research Laboratory, Hitachi, Ltd.
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Kakibayashi Hiroshi
Central Research Laboratory Hitachi Ltd
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Ono Yuichi
Central Research Laboratory Hitachi Ltd.
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KAKIBAYASHI Hiroshi
Central Research Laboratory, Hitachi, Ltd
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