Zinc Diffusion into GaAs_<1-x>P_x by Ga-P-Zn Ternary Alloy Source

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1972-01-05

著者

• Kurata Kazuhiro

  Central Research Laboratory Hitachi Ltd.

• Ono Y

  Central Research Laboratory Hitachi Ltd

• Ono Yuichi

  Central Research Laboratory Hitachi Ltd.

関連論文

• Growth of Gallium Arsenide Single Crystal from Liquid Phase on Seed Crystal
• Zinc Diffusion into GaAs_P_x by Ga-P-Zn Ternary Alloy Source
• A Method of Producing Heterojunctions between Compound Semiconductors by Alloying and Substitution Reaction
• Growth of Gallium Arsenide Single Crystals by Free Surface Method
• Epitaxial Growth of GaAs_P_x
• Effect of Donor Concentration on Several Properties of Gallium Arsenide Phosphide
• A New Two-Dimensional Electron Gas Field-Effect Transistor Fabricated on Undoped AlGaAs-GaAs Heterostructure
• GaAs_P_x Light Emitting Diodes Produced by Zn Ion Implantation. : I. Dose Dependence of Properties of Implanted Diodes
• Observation of Fine Compositional Fluctuation in GaAs/AI_xGa_As Superstructure Using Composition Analysis by Thickness-Fringe (CAT) Method
• Energy Barrier at the Metal-Amorphous Se Film

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