Effect of Donor Concentration on Several Properties of Gallium Arsenide Phosphide
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概要
- 論文の詳細を見る
The effects of donor concentration on electrical and electroluminescent properties in vapor-grown GaAs_<0.62>P_<0.38> single crystals are investigated at 300 K. Electron mobility decreases rapidly for N_D (donor concentration)> 〜10^<17>cm^<-3>, and the obtained maximum electron mobility is 3150 cm^2/V.s (N_D=1.54×10^<15>cm^<-3>). It is revealed that heavily doped (N_D&&sp;10^<17>cm^<-3>) samples show a relatively strong infrared emission spectrum peaked at 〜9500Å and that this infrared emission causes different behaviors in I-η_<ext> (the quantum efficiency) curves between the samples of low and high donor level.
- 社団法人応用物理学会の論文
- 1972-03-05
著者
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KURATA Kazuhiro
Central Research Laboratory, Hitachi Ltd.
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Kurata Kazuhiro
Central Research Laboratory Hitachi Ltd.
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OGIRIMA Masahiko
Central Research Laboratory, Hitachi Ltd.
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Ogirima Masahiko
Central Research Laboratory Hitachi Ltd.
関連論文
- Growth of Gallium Arsenide Single Crystal from Liquid Phase on Seed Crystal
- Zinc Diffusion into GaAs_P_x by Ga-P-Zn Ternary Alloy Source
- A Method of Producing Heterojunctions between Compound Semiconductors by Alloying and Substitution Reaction
- Growth of Gallium Arsenide Single Crystals by Free Surface Method
- Epitaxial Growth of GaAs_P_x
- Effect of Donor Concentration on Several Properties of Gallium Arsenide Phosphide
- Vapor-Phase Epitaxial Growth and Defects of Gallium Phosphide