Growth of Gallium Arsenide Single Crystals by Free Surface Method
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1963-01-15
著者
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Endo Takao
Central Research Laboratory Hitachi Ltd.
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KURATA Kazuhiro
Central Research Laboratory, Hitachi Ltd.
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Kurata Kazuhiro
Central Research Laboratory Hitachi Ltd.
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SHIRAFUJI Junji
Central Research Laboratory, Hitachi, Ltd.
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Shirafuji Junji
Central Research Laboratory Hitachi Ltd.
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Shirafuji Junji
Central Research Laboratory
関連論文
- Growth of Gallium Arsenide Single Crystal from Liquid Phase on Seed Crystal
- Zinc Diffusion into GaAs_P_x by Ga-P-Zn Ternary Alloy Source
- A Method of Producing Heterojunctions between Compound Semiconductors by Alloying and Substitution Reaction
- Growth of Gallium Arsenide Single Crystals by Free Surface Method
- Epitaxial Growth of GaAs_P_x
- Effect of Donor Concentration on Several Properties of Gallium Arsenide Phosphide
- GaAs-Ge Alloyed Junction
- Low Frequency Photocurrent Oscillation in High Resistivity GaAs
- Temperature Dependence of the Photoconductive Lifetime in N-Type Gallium Arsenide Diffused with Copper
- Current Oscillation and Some Photoelectric Properties in High Resistivity Gallium Arsenide Produced by Irradiation of Fast Neutrons
- Effect of Heat Treatment on p-GaAs with Diffused Cu
- Impurity Conduction in p-GaAs with Diffused Cu