A Method of Producing Heterojunctions between Compound Semiconductors by Alloying and Substitution Reaction

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Growth of Gallium Arsenide Single Crystal from Liquid Phase on Seed Crystal
Zinc Diffusion into GaAs_P_x by Ga-P-Zn Ternary Alloy Source
A Method of Producing Heterojunctions between Compound Semiconductors by Alloying and Substitution Reaction
Growth of Gallium Arsenide Single Crystals by Free Surface Method
Epitaxial Growth of GaAs_P_x
Effect of Donor Concentration on Several Properties of Gallium Arsenide Phosphide
A Theory for Intervalley Transfer Effect in Two-Valley Semiconductors
Two-dimensional Analysis of Vertical Junction Gate FET's : A-4: FIELD EFFECT TRANSISTORS (I)
Effect of Field-Dependent Carrier Diffusion on the Two-Dimensional Analysis of a Junction Gate FET
Effect of Doping on the Electron Spin Resonance in Phosphorus Doped Silicon. : III. Absorption Intensity
Implication of Contact Thermalization Effect in Two-Valley Semiconductors for the High Frequency Device Performance
Diffusion of Impurities in the Semiconductor Melt III. : Experimental Determination of Thickness of the Solute Diffusion Layer in the Melting Process
GaAs-Ge Alloyed Junction
Low Frequency Photocurrent Oscillation in High Resistivity GaAs
Temperature Dependence of the Photoconductive Lifetime in N-Type Gallium Arsenide Diffused with Copper
Current Oscillation and Some Photoelectric Properties in High Resistivity Gallium Arsenide Produced by Irradiation of Fast Neutrons
Effect of Heat Treatment on p-GaAs with Diffused Cu
Diffusion of Impurities in the Semiconductor Melt II. : Dynamical Analysis of Impurity Redistribution in the Melting Process
Constitutional Supercooling during the Crystal Growth of Germanium and Silicon
Effect of Doping on the Electron Spin Resonanceain Phosphorus Doped Silicon Studied at Liquid Nitrogen Temperature
Effect of Doping on the Electron Spin Resonance in Phosphorus Doped Silicon. : IV. Experimental Study at Liquid Helium Temperature
Effect of Doping on the Electron Spin Resonance in Phosphorus Doped Silicon
Impurity Conduction in p-GaAs with Diffused Cu
Precipitation of Antimony in Heavily Doped Silicon Identified by X-ray Microanalyzer
Diffusion Coefficients of Impurities in Silicon Melt
Dyson Effect in the Electron Spin Resonance of Phosphorus Doped Silicon
Solid Solubility of Gold in Germanium

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