Implication of Contact Thermalization Effect in Two-Valley Semiconductors for the High Frequency Device Performance

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A Method of Producing Heterojunctions between Compound Semiconductors by Alloying and Substitution Reaction
A Theory for Intervalley Transfer Effect in Two-Valley Semiconductors
Two-dimensional Analysis of Vertical Junction Gate FET's : A-4: FIELD EFFECT TRANSISTORS (I)
Effect of Field-Dependent Carrier Diffusion on the Two-Dimensional Analysis of a Junction Gate FET
Effect of Doping on the Electron Spin Resonance in Phosphorus Doped Silicon. : III. Absorption Intensity
Implication of Contact Thermalization Effect in Two-Valley Semiconductors for the High Frequency Device Performance
Diffusion of Impurities in the Semiconductor Melt III. : Experimental Determination of Thickness of the Solute Diffusion Layer in the Melting Process
Diffusion of Impurities in the Semiconductor Melt II. : Dynamical Analysis of Impurity Redistribution in the Melting Process
Constitutional Supercooling during the Crystal Growth of Germanium and Silicon
Effect of Doping on the Electron Spin Resonanceain Phosphorus Doped Silicon Studied at Liquid Nitrogen Temperature
Effect of Doping on the Electron Spin Resonance in Phosphorus Doped Silicon. : IV. Experimental Study at Liquid Helium Temperature
Effect of Doping on the Electron Spin Resonance in Phosphorus Doped Silicon
Precipitation of Antimony in Heavily Doped Silicon Identified by X-ray Microanalyzer
Diffusion Coefficients of Impurities in Silicon Melt
Dyson Effect in the Electron Spin Resonance of Phosphorus Doped Silicon
Solid Solubility of Gold in Germanium

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