Diffusion of Impurities in the Semiconductor Melt III. : Experimental Determination of Thickness of the Solute Diffusion Layer in the Melting Process
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概要
- 論文の詳細を見る
The thickness of the solute diffusion layer in the melting process is determined through various experiments which give some informations about the impurity distribution. Experimental results are analyzed using the method of analysis reported in the preceding paper (Japan. J. Appl. Phys.2 (1963) 220). The existence of the solute diffusion layer in the melting process is confirmed for both germanium and silicon. The thickness of the solute diffusion layer is estimated to be 0.4mm for germanium and 1mm for silicon.
- 社団法人応用物理学会の論文
- 1963-04-15
著者
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Iida Shinya
Central Research Laboratory Hitachi Ltd.
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Kodera Hiroshi
Central Research Laboratory Hitachi Ltd.
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TAUCHI Shoji
Central Research Laboratory, Hitachi Ltd.
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Tauchi Shoji
Central Research Laboratory Hitachi Led.
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