A Thin GaAs N on N^+ Epitaxial Film with Abrupt Interface in Carrier Concentration Profile

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1970-01-05

著者

• SATO Hitoshi

  Central Research Laboratory, Hitachi Ltd.

• Iida Shinya

  Central Research Laboratory Hitachi Ltd.

• Sato Hitoshi

  Central Research Laboratory Hitachi Ltd.

関連論文

• Accelerated Aging Characteristics of InGaAsP/InP Buried Heterostructure Lasers Emitting at 1.3μm
• Vapor Growth of Germanium by the Hydrogen Reduction of Germanium Tetraiodide
• Epitaxial Vapor Growth in Germanium-Bromine System
• Dislocation Etch Pits on the (1102) Surface of Sapphire Crystals
• Diffusion of Impurities in the Semiconductor Melt III. : Experimental Determination of Thickness of the Solute Diffusion Layer in the Melting Process
• A Thin GaAs N on N^+ Epitaxial Film with Abrupt Interface in Carrier Concentration Profile
• Vapor Etching of GaAs Single Crystals with HCl Gas
• Epitaxial Growth of Germanium by the Hydrogen Reduction of GeI_4
• Vapor Etching of Germanium by Germanium Tetraiodide
• Preparation of GaAs-Ge and InAs-GaAs Heterojunctions in a Closed Tube System Using Iodine Process

スポンサーリンク