Epitaxial Growth of Germanium by the Hydrogen Reduction of GeI_4

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概要

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• Epitaxial vapor growth of germanium from GeI_4 with hydrogen and argon atmosphere was studied. Growth occurred only in hydrogen atmosphere. Vapor etching of substrate was observed at relatively large GeI_4 mole fraction in the case of hydrogen and all the cases in argon. Growth conditions were in vestigated, with changing various growth parameters. It was observed that the growth rates were greatly influenced by the carrier gas flow rate as well as the mole fraction and the substrate temperature. It was concluded that the growth occurred by the hydrogen reduction of GeI_4 and not by the disproportionation reaction of GeI_2 formed by the decomposition of GeI_4 in hydrogen.

• 社団法人応用物理学会の論文
• 1966-02-15

著者

• Iida Shinya

  Central Research Laboratory Hitachi Ltd.

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