Dislocation Etch Pits on the (1102) Surface of Sapphire Crystals
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1976-10-05
著者
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Iida Shinya
Central Research Laboratory Hitachi Ltd.
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Ishii Mitsuru
Central Research Laboratory Hitachi Ltd.
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Mizutani Tatsumi
Central Reseach Laboratory Hitachi Ltd.
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Mizutani Tatsumi
Central Research Laboratory Hitachi Ltd.
関連論文
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- Mechanism of CF Polymer Film Deposition through High-Aspect-Ratio SiO_2 Holes
- Epitaxial Vapor Growth in Germanium-Bromine System
- Dislocation Etch Pits on the (1102) Surface of Sapphire Crystals
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- Radiation Damage in SiO_2/Si Induced by Low-Energy Electrons via Plasmon Excitation : Beam Induced Physics and Chemistry
- Neutral-Beam-Assisted Etching of SiO_2 : A Charge-Free Etching Process : Etching and Deposition Technology
- Preparation of GaAs-Ge and InAs-GaAs Heterojunctions in a Closed Tube System Using Iodine Process
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