Neutral-Beam-Assisted Etching of SiO_2 : A Charge-Free Etching Process : Etching and Deposition Technology
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1991-01-31
著者
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YUNOGAMI Takashi
Central Research Laboratory, Hitachi, Ltd.
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Mizutani Tatsumi
Central Reseach Laboratory Hitachi Ltd.
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Mizutani Tatsumi
Central Research Laboratory Hitachi Ltd
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Yunogami Takashi
Central Research Laboratory Hitachi Ltd
関連論文
- Mechanism of Radiation Damage in SiO_2/Si Induced by vuv Photons : Beam-Induced Physics and Chemistry
- Mechanism of Radiation Damage in SiO_2/Si Induced by vuv Photons
- Neutral-Beam-Assisted Etching of SiO_2 : A Charge-Free Etching Process
- Mechanism of E' Center Generation in SiO_2 Film by Ion and Neutral Beam Bombardment : Beam Induced Physics and Chemistry
- Mechanism of E' Center Generation in SiO_2 Film by Ion and Neutral Beam Bombardment
- Positive Charges and E' Centers Formed by Vacuum Ultraviolet Radiation in SiO_2 Grown on Si : Beam-Induced Physics and Chemistry
- Positive Charges and E' Centers Formed by Vacuum Ultraviolet Radiation in SiO_2 Grown on Si
- Mechanism of CF Polymer Film Deposition through High-Aspect-Ratio SiO_2 Holes
- Dislocation Etch Pits on the (1102) Surface of Sapphire Crystals
- Preferential Sputtering of Oxygen from SiO_2 by Low-Energy Ion Beam and Neutral Beam Bombardment
- Radiation Damage in SiO_2/Si Induced by Low-Energy Electrons via Plasmon Excitation : Beam Induced Physics and Chemistry
- Neutral-Beam-Assisted Etching of SiO_2 : A Charge-Free Etching Process : Etching and Deposition Technology
- Radiation Damage in SiO_2/Si Induced by VUV Photons : Etching and Deposition Technology
- Radiation Damage in SiO2/Si Induced by VUV Photons