Radiation Damage in SiO_2/Si Induced by Low-Energy Electrons via Plasmon Excitation : Beam Induced Physics and Chemistry

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1992-04-30

著者

• YUNOGAMI Takashi

  Central Research Laboratory, Hitachi, Ltd.

• Mizutani Tatsumi

  Central Reseach Laboratory Hitachi Ltd.

• Yunogami Takashi

  Central Research Laboratory Hitachi Ltd.

• Yunogami Takashi

  Central Research Laboratory Hitachi Ltd

関連論文

• Mechanism of Radiation Damage in SiO_2/Si Induced by vuv Photons : Beam-Induced Physics and Chemistry
• Mechanism of Radiation Damage in SiO_2/Si Induced by vuv Photons
• Neutral-Beam-Assisted Etching of SiO_2 : A Charge-Free Etching Process
• Mechanism of E' Center Generation in SiO_2 Film by Ion and Neutral Beam Bombardment : Beam Induced Physics and Chemistry
• Mechanism of E' Center Generation in SiO_2 Film by Ion and Neutral Beam Bombardment
• Positive Charges and E' Centers Formed by Vacuum Ultraviolet Radiation in SiO_2 Grown on Si : Beam-Induced Physics and Chemistry
• Positive Charges and E' Centers Formed by Vacuum Ultraviolet Radiation in SiO_2 Grown on Si
• Mechanism of CF Polymer Film Deposition through High-Aspect-Ratio SiO_2 Holes
• Dislocation Etch Pits on the (1102) Surface of Sapphire Crystals
• Preferential Sputtering of Oxygen from SiO_2 by Low-Energy Ion Beam and Neutral Beam Bombardment
• Radiation Damage in SiO_2/Si Induced by Low-Energy Electrons via Plasmon Excitation : Beam Induced Physics and Chemistry
• Neutral-Beam-Assisted Etching of SiO_2 : A Charge-Free Etching Process : Etching and Deposition Technology
• Radiation Damage in SiO_2/Si Induced by VUV Photons : Etching and Deposition Technology
• Radiation Damage in SiO2/Si Induced by VUV Photons

もっと見る 閉じる

スポンサーリンク