Mechanism of E' Center Generation in SiO_2 Film by Ion and Neutral Beam Bombardment

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概要

• 論文の詳細を見る

• The radiation damage in SiO_2 films thermally grown on silicon and bounbarded by ion and neutral beams has been studied by electron spin resonance (ESR). It is found that the E' center generation yield is much higher for ion bombardment than for neutral bombardment in spite of the same kinds of atoms and the satne incident energy. The generation yield of ion-induced E' centers depends on the incident energy and ionization energy of the parent atom. Out the other hand, for neutral bombardment, it depends only on the incident energy. These results indicate that the neutral-induced E' centers are created by bond breaking due to a collision cascade. However, ion-induced E' centers are generated by both collision cascades and carriers (electrons and holes) induced in the SiO_2 film by ion neutralization.

• 社団法人応用物理学会の論文
• 1991-11-30

著者

• Ninomiya Kunimoto

  New Materials Research Center Sanyo Electric Co. Ltd.

• Ninomiya Kunimoto

  Functional Materials Research Center Sanyo Electric Co. Ltd.

• NINOMIYA Ken

  Central Research Laboratory, Hitachi, Ltd.

• Ninomiya K

  Central Research Laboratory

• Ninomiya Ken

  Central Research Laboratory Hitachi Ltd.

• Nishimatsu Shigeru

  Central Research Laboratory, Hitachi, Ltd.

• MIZUTANI Tatsumi

  Central Research Laboratory, Hitachi, Ltd

• Yokogawa K

  National Institute Of Advanced Industrial Science And Technology (aist) Aist-chugoku

• Yokogawa Kiyoshi

  Institute For Structural And Engineering Materials National Institute Of Advance Industrial Science

• YAJIMA Yusuke

  Central Research Laboratory, Hitachi, Ltd.

• Mizutani Tatsumi

  Central Reseach Laboratory Hitachi Ltd.

• Nishimatsu S

  Central Research Laboratory Hitachi Ltd.

• Nishimatsu Shigeru

  Central Research Laboratory Hitachi Lid.

• Yajima Y

  Ibaraki Univ. Mito Jpn

• Yajima Yusuke

  Central Research Laboratory Hitachi Ltd.

• NINOMIYA Ken

  Central Research Laboratory

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