Nondestructive Depth Profile Analysis by Changing Escape Depth of Photoelectrons
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-10-15
著者
-
Ninomiya Kunimoto
New Materials Research Center Sanyo Electric Co. Ltd.
-
Ninomiya Kunimoto
Functional Materials Research Center Sanyo Electric Co. Ltd.
-
NINOMIYA Ken
Central Research Laboratory, Hitachi, Ltd.
-
Ninomiya K
Central Research Laboratory
-
Ninomiya Ken
Central Research Laboratory Hitachi Ltd.
-
Hasegawa M
Division V Superconductivity Research Laboratory International Superconductivity Technology Center
-
HASEGAWA Masaki
Central Research Laboratory, Hitachi, Ltd.
-
Hasegawa Masaki
Central Research Laboratory Hitachi Lid.
-
NINOMIYA Ken
Central Research Laboratory
-
Hasegawa Masaki
Division V, Superconductivity Research Laboratory, International Superconductivity Technology Center
関連論文
- Low-Hydrogen-Content, Stable Amorphous Silicon Thin Films Prepared by Ion-Assisted Method
- High-Quality Wide-Gap Hydrogenated Amorphous Silicon Fabricated Using Hydrogen Plasma Post-Treatment
- Positron Annihilations Associated with Defects in Plastically Deformed Si
- Charge State Dependences of Positron Trapping Rates Associated with Divacancies and Vacancy-Phosphorus Pairs in Si
- X-Ray Photoelectron Spectroscopy Using A Focused 300 μm-Diameter X-Ray Beam
- X-Ray Photoelectron Spectroscopy of Micrometer-Size Surface Area Using Synchrotron Radiation
- Evidence of Mobile Ag and Growth Mechanism of YBa_2Cu_3O_7-y Films Deposited on Cube Textured Ag Tape by Chemical Vapor Deposition
- Spiral Growth of YBa_2Cu_3O_ Thin Films by Metalorganic Chemical Vapor Deposition Using Liquid-State Sources
- Nondestructive Depth Profile Analysis by Changing Escape Depth of Photoelectrons
- Transient Light-Induced ESR Investigations of the Role of Hydrogen in the Stability of a-Si:H
- Amorphous Silicon-Carbon Alloy Prepared by the CMP (Controlled Plasma Magnetron) Method
- Preparation and Properties of a-Si Films Deposited at a High Deposition Rate under a Magnetic Field
- Diffusion Constants of Si Adsorbates on a Si(001) Surface
- Observation of 1-nm-High Structures on a Si (001) Surface Using a Differential Interference Optical Microscope
- High-Rate Deposition of a-Si:H Film with a Separated Plasma Triode Method
- Microscopic X-ray Photoelectron Spectroscopy Using a Wolter Type X-ray Mirror
- Crystal Growth of Tl-Based Cuprate Superconductors
- Mechanism of E' Center Generation in SiO_2 Film by Ion and Neutral Beam Bombardment : Beam Induced Physics and Chemistry
- Mechanism of E' Center Generation in SiO_2 Film by Ion and Neutral Beam Bombardment
- Si Etching with a Hot SF_6 Beam and the Etching Mechanism
- Analytical Investigation of Plasma and Electrode Potentials in a Diode Type RF Discharge
- Si Etching with a Hot SF_6 Beam
- Titration Method for Measuring Fluorine Atom Concentration in Microwave Plasma Etching
- Modeling of Photoinduced Optical Anisotropy and Anchoring Energy of Polyimide Exposed to Linearly Polarized Deep UV Light
- Total Photo-Yield Imaging of Stripe Patterns Using Soft X-Ray Microbeam Formed by Wolter-Type Mirror
- Fabrication of an Axisymmetric Wolter Type I Mirror with a Gold Deposited Reflecting Surface