Radiation Damage in SiO2/Si Induced by VUV Photons

概要

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Quantitative measurements of radiation damage in SiO2/Si systems induced by VUV photons generated in various microwave plasmas are performed. The SiO2/Si system is irradiated by monochromatic VUV photons, and its flat-band voltage shift ($\varDelta V_{\text{FB}}$) is measured by the C-V method. The number of effective positive charges generated in the SiO2 layer by a single VUV photon ($R_{\text{f}}$) is evaluated from the $\varDelta V_{\text{FB}}$ and the total VUV dose. A VUV photon is found to generate effective positive charges in SiO2 when its energy ($E_{\text{p}}$) is larger than the SiO2 band gap energy ($E_{\text{g}}{=}8.8$ eV). The value of $R_{\text{f}}$ is on the order of $10^{-3}\sim 10^{-2}$ and increases in proportional to the energy difference between $E_{\text{p}}$ and $E_{\text{g}}$ . A model is proposed to explain these phenomena. The model states that a VUV photon with energy $E_{\text{p}}({>}E_{\text{g}}$) generates an electron-hole pair in the SiO2 and the holes that are not recombined are trapped in the energy state near the SiO2/Si interface.
INSTITUTE OF PURE AND APPLIED PHYSICSの論文
1989-10-20