Microwave Plasma Etching

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概要

• 論文の詳細を見る

• A new plasma etching technique using microwave discharge is presented. Silicon wafers are etched by the discharge in a (CF_4+O_2) gas mixture. Fine patterns with dimensions of 1 μm are etched up to 1 μm in depth without undercutting at a pressure of 5×10^<-4> Torr with an Al mask having 0.08 μm thickness. Etching is thought to be carried out by chemical reactions. With this technique, the etching rate becomes maximum (2.6×10^<-2> μm/min) when the mixing ratio γ is 20%. Symbol γ is the partial pressure of O_2 divided by the total pressure. The etched depth is proportional to the etching time. This technique is suitable for etching fine patterns of semiconductor devices.

• 社団法人応用物理学会の論文
• 1977-11-05

著者

• SUZUKI Keizo

  Central Research Laboratory, Hitachi, Ltd.

• Kanomata Ichiro

  Central Research Laboratory Hitachi Limited

• SAKUDO Noriyuki

  Central Research Laboratory, Hitachi Ltd.

• Okudaira Sadayuki

  Central Research Laboratory Hitachi Limited

• Sakudo Noriyuki

  Central Research Laboratory Hitachi Limited

• Suzuki Keizo

  Central Research Laboratory Hitachi Limited

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• Fabrication of an Axisymmetric Wolter Type I Mirror with a Gold Deposited Reflecting Surface
• Radiation Damage in SiO2/Si Induced by VUV Photons
• Vibrational and Rotational Energy Distributions in a Hot Cl2 Molecular Beam

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