Mechanism of E' Center Generation in SiO_2 Film by Ion and Neutral Beam Bombardment : Beam Induced Physics and Chemistry
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-04-30
著者
-
Ninomiya Kunimoto
New Materials Research Center Sanyo Electric Co. Ltd.
-
Ninomiya Kunimoto
Functional Materials Research Center Sanyo Electric Co. Ltd.
-
NINOMIYA Ken
Central Research Laboratory, Hitachi, Ltd.
-
Ninomiya K
Central Research Laboratory
-
Ninomiya Ken
Central Research Laboratory Hitachi Ltd.
-
Nishimatsu Shigeru
Central Research Laboratory, Hitachi, Ltd.
-
MIZUTANI Tatsumi
Central Research Laboratory, Hitachi, Ltd
-
Yokogawa K
National Institute Of Advanced Industrial Science And Technology (aist) Aist-chugoku
-
Yokogawa Kiyoshi
Institute For Structural And Engineering Materials National Institute Of Advance Industrial Science
-
YAJIMA Yusuke
Central Research Laboratory, Hitachi, Ltd.
-
Mizutani Tatsumi
Central Reseach Laboratory Hitachi Ltd.
-
Nishimatsu S
Central Research Laboratory Hitachi Ltd.
-
Nishimatsu Shigeru
Central Research Laboratory Hitachi Lid.
-
Yajima Y
Ibaraki Univ. Mito Jpn
-
Yajima Yusuke
Central Research Laboratory Hitachi Ltd.
-
NINOMIYA Ken
Central Research Laboratory
関連論文
- Low-Hydrogen-Content, Stable Amorphous Silicon Thin Films Prepared by Ion-Assisted Method
- High-Quality Wide-Gap Hydrogenated Amorphous Silicon Fabricated Using Hydrogen Plasma Post-Treatment
- Atomic Hydrogen Induced Surface Restructuring on the Tin-Covered Si(111) Observed by Scanning Tunneling Microscopy
- X-Ray Photoelectron Spectroscopy Using A Focused 300 μm-Diameter X-Ray Beam
- X-Ray Photoelectron Spectroscopy of Micrometer-Size Surface Area Using Synchrotron Radiation
- Nondestructive Depth Profile Analysis by Changing Escape Depth of Photoelectrons
- Transient Light-Induced ESR Investigations of the Role of Hydrogen in the Stability of a-Si:H
- Amorphous Silicon-Carbon Alloy Prepared by the CMP (Controlled Plasma Magnetron) Method
- Preparation and Properties of a-Si Films Deposited at a High Deposition Rate under a Magnetic Field
- Diffusion Constants of Si Adsorbates on a Si(001) Surface
- Observation of 1-nm-High Structures on a Si (001) Surface Using a Differential Interference Optical Microscope
- Investigation of Interaction of Hydrogen with Oxygen-Induced Nb(100) Surfaces by Scanning Tunneling Microscopy
- Graphitization of 6H-SiC(0001^^-) Surface by Scanning Tunneling Microscopy
- Characteristics of the (√ × √)R30° Superstructure of Graphite by Scanning Tunneling Microscopy
- Surface Structure on Ar^+-Ion Irradiated Graphite by Scanning Probe Microscopy
- Surface Superstructure of Carbon Nanotubes on Highly Oriented Pyrolytic Graphite Annealed at Elevated Temperatures
- High-Rate Deposition of a-Si:H Film with a Separated Plasma Triode Method
- Ac Surface Photovoltages in Strongly-Inverted Oxidized p-Type Silicon Wafers^*
- Microscopic X-ray Photoelectron Spectroscopy Using a Wolter Type X-ray Mirror
- Mechanism of Radiation Damage in SiO_2/Si Induced by vuv Photons : Beam-Induced Physics and Chemistry
- Mechanism of Radiation Damage in SiO_2/Si Induced by vuv Photons
- Neutral-Beam-Assisted Etching of SiO_2 : A Charge-Free Etching Process
- Short Channel MOS-IC Based on Accurate Two Dimensional Device Design : A-6: MOS FIELD EFFECT TRANSISTORS
- Simulation of Hydrogen Embrittlement at Crack Tip in Nickel Single Crystal by Embedded Atom Method
- Mechanism of E' Center Generation in SiO_2 Film by Ion and Neutral Beam Bombardment : Beam Induced Physics and Chemistry
- Mechanism of E' Center Generation in SiO_2 Film by Ion and Neutral Beam Bombardment
- Positive Charges and E' Centers Formed by Vacuum Ultraviolet Radiation in SiO_2 Grown on Si : Beam-Induced Physics and Chemistry
- Positive Charges and E' Centers Formed by Vacuum Ultraviolet Radiation in SiO_2 Grown on Si
- Observation of Magnetic Induction Distribution by Scanning Interference Electron Microscopy
- Mechanism of CF Polymer Film Deposition through High-Aspect-Ratio SiO_2 Holes
- Temperature Dependence of Reflectivity in MnSr_Ca_O_3
- Electron Phase Counting Micromagnetometry Using a Differential Phase Contrast /Interference Scanning Transmission Electron Microscope
- Si Etching with a Hot SF_6 Beam and the Etching Mechanism
- Analytical Investigation of Plasma and Electrode Potentials in a Diode Type RF Discharge
- Si Etching with a Hot SF_6 Beam
- Titration Method for Measuring Fluorine Atom Concentration in Microwave Plasma Etching
- Total Photo-Yield Imaging of Stripe Patterns Using Soft X-Ray Microbeam Formed by Wolter-Type Mirror
- Dislocation Etch Pits on the (1102) Surface of Sapphire Crystals
- Application of High Current Arsenic Ion Implantation to Dynamic MOS Memory LSI's : A-4: DEVICE TECHNOLOGY (1)
- Preferential Sputtering of Oxygen from SiO_2 by Low-Energy Ion Beam and Neutral Beam Bombardment
- Radiation Damage in SiO_2/Si Induced by Low-Energy Electrons via Plasmon Excitation : Beam Induced Physics and Chemistry
- Neutral-Beam-Assisted Etching of SiO_2 : A Charge-Free Etching Process : Etching and Deposition Technology
- Analysis of ac Surface Photovoltages in a Depleted Oxidized p-Type Silicon Wafer
- Observation of Magnetic Head Fields Using Distorted Transmission Electron Microscopy Images
- Magnetization Contrast Enhancement of Recorded Magnetic Storage Media in Scanning Lorentz Electron Microscopy
- Internal Reversible Hydrogen Embrittlement of Austenitic Stainless Steels Based on Type 316 at Low Temperatures
- Observation of Magnetic Head Fields Using Distorted Transmission Electron Microscopy Images
- Fabrication of an Axisymmetric Wolter Type I Mirror with a Gold Deposited Reflecting Surface
- Radiation Damage in SiO2/Si Induced by VUV Photons
- Vibrational and Rotational Energy Distributions in a Hot Cl2 Molecular Beam