Positive Charges and E' Centers Formed by Vacuum Ultraviolet Radiation in SiO_2 Grown on Si
スポンサーリンク
概要
- 論文の詳細を見る
Silicon dioxide films thermally grown on Si are irradiated with vacuum ultravioulet (VUV) photons (16.7 and 16.8 eV) as the films are supplied with bias voltages between -10 and 10 V. The resultant positive charges and E' centers in the films are studied by C-V (capacitance-voltage) and ESR measurements, respectively. The observed E' centers are distributed near the SiO_2 surface, while the positive charges are localized at or very near the SiO_2/Si interface. The positive charges and the E' centers show different characteristics in their bias and irradiation time dipendencies as well as in their depth distributions. These results indicate that the detected positive charges are different from holes trapped at oxygen vacancy sites between weak Si-Si bonds.
- 社団法人応用物理学会の論文
- 1990-10-20
著者
-
Suzuki K
School Of Science And Engineering Waseda University:kagami Memorial Laboratory For Materials Science
-
Suzuki K
Ntt Transmission Systems Laboratories Lightwave Communications Laboratory
-
Suzuki K
Assoc. Super‐advanced Electronics Technol. Kanagawa Jpn
-
Suzuki K
Department Of Information And Communication Technology Tokai University
-
SUZUKI Keizo
Central Research Laboratory, Hitachi, Ltd.
-
Nishimatsu Shigeru
Central Research Laboratory, Hitachi, Ltd.
-
MIZUTANI Tatsumi
Central Research Laboratory, Hitachi, Ltd
-
Yokogawa K
National Institute Of Advanced Industrial Science And Technology (aist) Aist-chugoku
-
Yokogawa Kiyoshi
Institute For Structural And Engineering Materials National Institute Of Advance Industrial Science
-
YAJIMA Yusuke
Central Research Laboratory, Hitachi, Ltd.
-
Mizutani Tatsumi
Central Reseach Laboratory Hitachi Ltd.
-
Nishimatsu S
Central Research Laboratory Hitachi Ltd.
-
Nishimatsu Shigeru
Central Research Laboratory Hitachi Lid.
-
Yajima Y
Ibaraki Univ. Mito Jpn
-
Yajima Yusuke
Central Research Laboratory Hitachi Ltd.
-
Suzuki Keizo
Central Research Laboratory Hitachi Limited
関連論文
- Formation of Nanocrystalline Structures by Crystallization of Amorphous Fe-M-B (M=IVa to VIa Group Metal) Alloys
- High Power Er^-Doped Fiber Amplifier Pumped by 1.48 μm Laser Diodes
- An 8 mW cw Er^-Doped Fiber Laser Pumped by 1.46 μm InGaAsP Laser Diodes
- High-Resolution Electron Microscopy of Extended Defects in Wurtzite Crystals
- Microstructures in a Twinned Single Crystal of Tetragonal La_Ba_Cu_3O_ : Electrical Properties of Condensed Matter
- In-Situ Observation of Formation of Staking Faults in Ni_3Ga by Stretching Thin Foils in an Electron Microscope
- High Tilt Angle Ion Implantation into Polycrystalline Si Gates
- Analysis of Non-Uniform Boron Penetration of Nitrided Oxide in PMOSFETs Considering Two-Dimensional Nitrogen Distribution
- Boron Penetration Enhanced by Gate Ion Implantation Damage in PMOSFETs
- Hydrogen-Enhanced Boron Penetration in PMOS Devices during SiO_2 Chemical Vapor Deposition
- Hydrogen-Enhancing Boron Penetration in P-MOS Devices during SiO_2 Chemical Vapor Deposition
- Boron Diffusion in Nitrided-Oxide Gate Dielectrics Leading to High Suppression of Boron Penetration in P-MOSFETs
- Boron Diffusion in Nitrided Oxide Gate Dielectrics Leading to High Suppression of Boron Penetration in P-MOSFETs
- Sb Multiple Ion Implanted Channel for Low V_, Deep Submicron SOI-pMOSFETs
- Vth Rolloff Free Sub 0.1μm SOI MOSFETs Using Counter Doping into a Uniformly and Heavily Doped Channel Region
- Thermal Budget for Fabricating A Dual Gate Deep-Submicron CMOS with Thin Pure Gate Oxide
- Superconductivity of ZrRuP
- Electrical Conductivity of Nickel Phosphides
- Humidity Dependence of Photoluminescence in Coumarin-4-Doped Sol-Gel Coating Film
- Electron and Hole Proximity Effects in the InAs/AlSb/GaSb System
- Optically Detected Cyclotron Resonance by Multichannel Spectroscopy
- Electrical Properties of Regrowth ZnSe Homointerfaces Formed by Molecular Beam Epitaxy
- Electrical Properties of ZnSe/ZnSe Homointerfaces Formed by MBE Regrowth Process
- Characterization of Epitaxial ZnSe/GaAs(100) Interface Properties and Their Control by (HF+Se)-Pretreatment
- Characterization and Control of MBE-ZnSe/GaAs(100) Substrate Interface and Regrown ZnSe/ZnSe Homointerface
- Microoptical Two-Dimensional Devices for the Optical Memory Head of an Ultrahigh Data Transfer Rate and Density Sytem Using a Vertical Cavity Surface Emitting Laser (VCSEL) Array
- Parallel Recording Array Head of Nano-Aperture Flat-Tip Probes for High-Density Near-Field Optical Data Storage
- Mask Error Factor in Proximity X-Ray Lithography
- Determination of the Facet Index in Area Selective Epitaxy of GaAs
- Fabrication of Micro-Pyramidal Probe Array with Aperture for Near-Field Optical Memory Applications
- Optimum Phase Condition for Low-Contrast X-Ray Masks
- Selective Growth of GaAs on GaAs (111)B Substrates by Migration-Enhanced Epitaxy
- Determination of the Facet Index in Area Selective Epitaxy of GaAs
- High-Density Phase-Change Optical Disc with Low-to-High Signal Direction
- High-Density Recording Capability of Five-Layered Phase-Change Optical Disc
- Atomic Hydrogen Induced Surface Restructuring on the Tin-Covered Si(111) Observed by Scanning Tunneling Microscopy
- Second-Order Piezoresistance Coefficients of p-Type Silicon
- Second-Order Piezoresistance Coefficients of n-Type Silicon
- X-Ray Photoelectron Spectroscopy Using A Focused 300 μm-Diameter X-Ray Beam
- Classification of Inhomogeneities in Hydrogenated Amorphous Silicon
- X-Ray Photoelectron Spectroscopy of Micrometer-Size Surface Area Using Synchrotron Radiation
- Fabrication of Epitaxial Diamond Thin Film on Iridium
- Epitaxial Growth of Diamond on Iridium
- Growth of Diamond Thin Films by dc Plasma Chemical Vapor Deposition and Characteristics of the Plasma
- Investigation of Interaction of Hydrogen with Oxygen-Induced Nb(100) Surfaces by Scanning Tunneling Microscopy
- Graphitization of 6H-SiC(0001^^-) Surface by Scanning Tunneling Microscopy
- Characteristics of the (√ × √)R30° Superstructure of Graphite by Scanning Tunneling Microscopy
- Surface Structure on Ar^+-Ion Irradiated Graphite by Scanning Probe Microscopy
- Surface Superstructure of Carbon Nanotubes on Highly Oriented Pyrolytic Graphite Annealed at Elevated Temperatures
- Age-related Change in Relationship between White Blood Cell Count and Some Features of the Metabolic Syndrome
- Association of Lifestyle with Serum Lipid Levels : a Study of Middle-Aged Japanese Men
- Body Mass Index as a Measure of Health Care for Japanese Male Office Workers
- The Incidence of Hyperuricemia and Correlated Factors in Middle-Ages Japanese Men
- Associations of Body Mass Index and Percentage Body Fat by Bioelectrical Impedance Analysis with Cardiovascular Risk Factors in Japanese Male Office Workers
- Relation of Body Weight Change to Changes in Atherogenic Traits, A Study of Middle-Aged Japanese Obese Male Office Workers
- Effects of Coffee Consumption against the Development of Liver Dysfunction:A4-Year Follow-Up Study of Middle-Aged Japanese Male Office Workers
- Lifestyle and the Development of Dyslipidemia : a 4-year Follow-up Study of Middle-aged Japanese Male Office Workers
- Serum Uric Acid : Correlation with Biological, Clinical and Behavioral Factors in Japanese Men
- Risk Factors for the Incidence of Aortic Stiffness by Serial Aortic Pulse Wave Velocity Measurement in Middle-aged Japanese men
- Ac Surface Photovoltages in Strongly-Inverted Oxidized p-Type Silicon Wafers^*
- Microscopic X-ray Photoelectron Spectroscopy Using a Wolter Type X-ray Mirror
- Mechanism of Radiation Damage in SiO_2/Si Induced by vuv Photons : Beam-Induced Physics and Chemistry
- Mechanism of Radiation Damage in SiO_2/Si Induced by vuv Photons
- Neutral-Beam-Assisted Etching of SiO_2 : A Charge-Free Etching Process
- Optical Characterization of Undoped a-Si:H Prepared by Photo-CVD and GD Techniques
- Validity of the Conventional Indirect Methods Including Friedewald Method for Determining Serum Low-Density Lipoprotein Cholesterol Level: Comparison with the Direct Homogeneous Enzymatic Analysis
- Short Channel MOS-IC Based on Accurate Two Dimensional Device Design : A-6: MOS FIELD EFFECT TRANSISTORS
- Crystallization from a Glassy State in the Bi-Sr-Ca-Cu-O System
- Simulation of Hydrogen Embrittlement at Crack Tip in Nickel Single Crystal by Embedded Atom Method
- Mechanism of E' Center Generation in SiO_2 Film by Ion and Neutral Beam Bombardment : Beam Induced Physics and Chemistry
- Mechanism of E' Center Generation in SiO_2 Film by Ion and Neutral Beam Bombardment
- Positive Charges and E' Centers Formed by Vacuum Ultraviolet Radiation in SiO_2 Grown on Si : Beam-Induced Physics and Chemistry
- Positive Charges and E' Centers Formed by Vacuum Ultraviolet Radiation in SiO_2 Grown on Si
- Observation of Magnetic Induction Distribution by Scanning Interference Electron Microscopy
- Effects of GaAs Surface Pretreatment and Post-Growth Annealing on Interface Properties of MBE-ZnSe/GaAs(Sub.) System
- Mechanism of CF Polymer Film Deposition through High-Aspect-Ratio SiO_2 Holes
- Temperature Dependence of Reflectivity in MnSr_Ca_O_3
- Doping-Induced Defects in P-Doped Photo-CVD a-Si:H
- Characterization of Photo-CVD a-Si:H Films by Thin-Film Transistor Structure
- Electron Phase Counting Micromagnetometry Using a Differential Phase Contrast /Interference Scanning Transmission Electron Microscope
- Resonant Directional Excitation of Helicon Waves by a Helical Antenna
- Hot Spots and Electron Heating Processes in a Helicon-Wave Excited Plasma
- Soft Magnetic Properties of bcc Fe-M-B-Cu (M=Ti, Nb or Ta) Alloys with Nanoscale Grain Size
- Si Etching with a Hot SF_6 Beam and the Etching Mechanism
- Analytical Investigation of Plasma and Electrode Potentials in a Diode Type RF Discharge
- Si Etching with a Hot SF_6 Beam
- Titration Method for Measuring Fluorine Atom Concentration in Microwave Plasma Etching
- Characterization of μc-Si:H Prepared by Photo-Chemical Vapor Deposition
- Microwave Plasma Etching
- Dislocation Etch Pits on the (1102) Surface of Sapphire Crystals
- Application of High Current Arsenic Ion Implantation to Dynamic MOS Memory LSI's : A-4: DEVICE TECHNOLOGY (1)
- A High-Speed Remote Procedure Call Based on Adaptive Data Representation Conversion
- A Design Method of Distributed Telecommunication System Based on the ODP Viewpoint Approach (Special Issue on Distributed Architecture for Next Generation Communication Networks)
- Preferential Sputtering of Oxygen from SiO_2 by Low-Energy Ion Beam and Neutral Beam Bombardment
- Radiation Damage in SiO_2/Si Induced by Low-Energy Electrons via Plasmon Excitation : Beam Induced Physics and Chemistry
- Neutral-Beam-Assisted Etching of SiO_2 : A Charge-Free Etching Process : Etching and Deposition Technology
- Phosphorus Doping Properties of Hydrogenated Amorphous Silicon Prepared by Mercury Sensitized Photo-CVD : Condensed Matter
- Radiation Damage in SiO_2/Si Induced by VUV Photons : Etching and Deposition Technology
- Internal Reversible Hydrogen Embrittlement of Austenitic Stainless Steels Based on Type 316 at Low Temperatures
- Radiation Damage in SiO2/Si Induced by VUV Photons