Effects of GaAs Surface Pretreatment and Post-Growth Annealing on Interface Properties of MBE-ZnSe/GaAs(Sub.) System
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概要
- 論文の詳細を見る
- 1995-08-21
著者
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澤田 嗣郎
Univ. Tokyo Tokyo Jpn
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Suzuki K
School Of Science And Engineering Waseda University:kagami Memorial Laboratory For Materials Science
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Suzuki Kazuhiko
Department of Veterinary Pathology, Graduate School of Agricultural and Life Sciences, The Universit
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Suzuki K
Ntt Transmission Systems Laboratories Lightwave Communications Laboratory
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Tsuda Shinya
R&d Headquarters Sanyo Electric Co. Ltd.
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Suzuki K
Assoc. Super‐advanced Electronics Technol. Kanagawa Jpn
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Imai Kazuaki
Department Of Applied Electronics Hokkaido Institute Of Technology
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SAWADA Takayuki
Department of Electrical Engineering, Faculty of Engineering, Hokkaido University
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Imai Keitaro
Ulsi Process Engineering Laboratory Microelectronics Engineering Laboratory Toshiba Corporation
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YAMAGATA Yuji
Department of Applied Electronics, Hokkaido Institute of Technology
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TSUBONO Isao
Department of Applied Electronics, Hokkaido Institute of Technology
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Suzuki K
Department Of Information And Communication Technology Tokai University
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Tsubono Isao
Department Of Applied Electronics Hokkaido Institute Of Technology
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Imai K
Toyota Physical And Chemical Research Institute
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Yamagata Y
Department Of Electrical And Computer Engineering Kumamoto University
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YAMAGATA Yukihiko
Department of Electrical and Computer Engineering, Kumamoto University
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Sawada Takayuki
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University
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Suzuki Kazuhiko
Department Of Electrical Engineering Hokkaido Institute Of Technology
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- Effects of GaAs Surface Pretreatment and Post-Growth Annealing on Interface Properties of MBE-ZnSe/GaAs(Sub.) System